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參數(shù)資料
| 型號： | K9F5616Q0C-D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mb/256Mb 1.8V NAND Flash Errata |
| 中文描述： | 512Mb/256Mb 1.8 NAND閃存勘誤表 |
| 文件頁數(shù)： | 36/39頁 |
| 文件大?。?/td> | 655K |
| 代理商： | K9F5616Q0C-D |
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K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
35
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
Block Lock Status can be read on a block basis, which may be read to find out whether designated block is available to be pro-
grammed or erased. After writing 7Ah command to the command register. and block address to be checked, a read cycle outputs the
content of the Block Lock Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control
allows the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or
CE does not need to be toggled for updated status. Blcok Lock Status Read is prohibited while the device is busy state.
Refer to table 6 for specific Status Register definitions. The command register remains in Block Lock Status Read mode until further
commands are issued to it.
In high state of LOCKPRE pin, write protection status can be checked by Block Lock Status
Read(7Ah) while in low state by Status Read(70h).
2. Block Lock Status Read
CE
CLE
WE
ALE
RE
7Ah
Read Block Lock
status Command
Block Lock Status
Add.1
Block Address 2cycle
I/Ox
Dout
Add.2
Table6. Block Lock Status Register definitions
WP
t
WHR2
IO7~IO3
IO2 Unlock)
IO1(Lock)
IO0(Lock-tight)
Read 1) block
case
X
0
1
0
Read 2) block
case
X
1
1
0
Read 3) block
case
X
0
0
1
Read ) block
case
X
1
0
1
(1)Lock
(2)unlock
(3)Lock-tight
(4)unlock
(1)Lock
(3)Lock-tight
(1)Lock
(2)Unlock
(3)Lock-tight
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F5616Q0C-H | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616U0C | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616U0C-D | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616U0C-H | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616U0C-P | 512Mb/256Mb 1.8V NAND Flash Errata |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F5616Q0C-DCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616Q0C-DIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616Q0C-H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0C-HCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616Q0C-HIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
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