參數(shù)資料
型號： K9F5616Q0C-H
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mb/256Mb 1.8V NAND Flash Errata
中文描述： 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁數(shù)： 3/39頁
文件大?。?/td> 655K
代理商： K9F5616Q0C-H
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
2
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
GENERAL DESCRIPTION
Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V
Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be
performed in typical 200
μ
s on a 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typ-
ical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word. The
I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all pro-
gram and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-
intensive systems can take advantage of the K9F56XXX0C
′
s extended reliability of 100K program/erase cycles by providing
ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F56XXX0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
FEATURES
Voltage Supply
- 1.8V device(K9F56XXQ0C) : 1.70~1.95V
- 3.3V device(K9F56XXU0C) : 2.7 ~ 3.6 V
Organization
- Memory Cell Array
- X8 device(K9F5608X0C) : (32M + 1024K)bit x 8 bit
- X16 device(K9F5616X0C) : (16M + 512K)bit x 16bit
- Data Register
- X8 device(K9F5608X0C) : (512 + 16)bit x 8bit
- X16 device(K9F5616X0C) : (256 + 8)bit x16bit
Automatic Program and Erase
- Page Program
- X8 device(K9F5608X0C) : (512 + 16)Byte
- X16 device(K9F5616X0C) : (256 + 8)Word
- Block Erase :
- X8 device(K9F5608X0C) : (16K + 512)Byte
- X16 device(K9F5616X0C) : ( 8K + 256)Word
Page Read Operation
- Page Size
- X8 device(K9F5608X0C) : (512 + 16)Byte
- X16 device(K9F5616X0C) : (256 + 8)Word
- Random Access : 10
μ
s(Max.)
- Serial Page Access : 50ns(Min.)
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
Fast Write Cycle Time
- Program time : 200
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Intelligent Copy-Back
Unique ID for Copyright Protection
Power-On Auto-Read Operation
Safe Lock Mechanism
Package
- K9F56XXU0C-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F56XXX0C-DCB0/DIB0
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- K9F5608U0C-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F56XXU0C-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F56XXX0C-HCB0/HIB0
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- Pb-free Package
- K9F5608U0C-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F5608U0C-V,F(WSOPI ) is the same device as
K9F5608U0C-Y,P(TSOP1) except package type.
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9F5608Q0C-D,H
1.70 ~ 1.95V
X8
TBGA
K9F5616Q0C-D,H
X16
K9F5608U0C-Y,P
2.7 ~ 3.6V
X8
TSOP1
K9F5608U0C-D,H
TBGA
K9F5608U0C-V,F
WSOP1
K9F5616U0C-Y,P
X16
TSOP1
K9F5616U0C-D,H
TBGA
相關(guān)PDF資料
PDF描述
K9F5616U0C 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-D 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-H 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-P 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-Y 512Mb/256Mb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5616Q0C-HCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5616Q0C-HIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0B-DCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616U0B-DIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616U0B-HCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
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