參數(shù)資料
型號: K9F5616Q0C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Mb/256Mb 1.8V NAND Flash Errata
中文描述: 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁數(shù): 28/39頁
文件大?。?/td> 655K
代理商: K9F5616Q0C
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
27
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
Figure 9. Read2 Operation
50h
Data Output(Sequential)
Spare Field
CE
CLE
ALE
R/B
WE
Start Add.(3Cycle)
RE
t
R
X8 device : A
0
~ A
3
& A
9
~ A
24
X16 device : A
0
~ A
2
& A
9
~ A
24
Main array
Data Field
Spare Field
Figure 8-1. Sequential Row Read1 Operation
(only for K9F5608U0C-Y,P or K9F5608U0C-V,F)
00h
01h
A
0
~ A
7
& A
9
~ A
24
I/Ox
R/B
Start Add.(3Cycle)
Data Output
Data Output
Data Output
1st
2nd
Nth
(528 Byte)
(528 Byte)
t
R
t
R
t
R
(00h Command)
Data Field
Spare Field
(01h Command)
Data Field
Spare Field
1st half array 2nd half array
1st
2nd
Nth
1st half array 2nd half array
1st
2nd
Nth
Block
X8 device : A
4
~ A
7
Don’t care
X16 device : A
3
~ A
7
are "L"
I/Ox
On K9F5608U0C_Y,P or K9F5608U0C_V,F
CE must be held
low during tR
相關PDF資料
PDF描述
K9F5616Q0C-D 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616Q0C-H 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-D 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-H 512Mb/256Mb 1.8V NAND Flash Errata
相關代理商/技術參數(shù)
參數(shù)描述
K9F5616Q0C-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5616Q0C-DCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5616Q0C-DIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5616Q0C-H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5616Q0C-HCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata