參數(shù)資料
型號： K9F5616U0C-DIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mb/256Mb 1.8V NAND Flash Errata
中文描述： 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁數(shù)： 8/39頁
文件大小： 655K
代理商： K9F5616U0C-DIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
7
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
512Byte
16 Byte
Figure 1-1. K9F5608X0C (X8) FUNCTIONAL BLOCK DIAGRAM
Figure 2-1. K9F5608X0C (X8) ARRAY ORGANIZATION
NOTE
: Column Address : Starting Address of the Register.
00h Command(Read) : Defines the starting address of the 1st half of the register.
01h Command(Read) : Defines the starting address of the 2nd half of the register.
* A
8
is set to "Low" or "High" by the 00h or 01h Command.
* The device ignores any additional input of address cycles than reguired.
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
1st Cycle
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
2nd Cycle
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
3rd Cycle
A
17
A
18
A
19
A
20
A
21
A
22
A
23
A
24
V
CC
V
SS
X-Buffers
Latches
& Decoders
256M + 8M Bit
NAND Flash
ARRAY
Command
Register
(512 + 16)Byte x 65536
Y-Gating
Page Register & S/A
I/O Buffers & Latches
Y-Buffers
Latches
& Decoders
Control Logic
& High Voltage
Generator
Global Buffers
Output
Driver
A
9
- A
24
A
0
- A
7
Command
CE
RE
WE
WP
I/0 0
I/0 7
V
CC/
V
CCQ
V
SS
A
8
1st half Page Register
(=256 Bytes)
2nd half Page Register
(=256 Bytes)
64K Pages
(=2,048 Blocks)
512 Byte
8 bit
16 Byte
1 Block =32 Pages
= (16K + 512) Byte
I/O 0 ~ I/O 7
1 Page = 528 Byte
1 Block = 528 Byte x 32 Pages
= (16K + 512) Byte
1 Device = 528Bytes x 32Pages x 2048 Blocks
= 264 Mbits
Column Address
Row Address
(Page Address)
Page Register
CLE ALE
相關(guān)PDF資料
PDF描述
K9F5616U0C-HCB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-HIB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-PCB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-PIB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-YCB0 512Mb/256Mb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5616U0C-H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-HCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-HIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5616U0C-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
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