參數(shù)資料
型號: K9K1208U0C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
中文描述: 6400 × 8位,32 × 16位NAND閃存
文件頁數(shù): 4/39頁
文件大?。?/td> 953K
代理商: K9K1208U0C
FLASH MEMORY
4
K9K1216D0C
K9K1216U0C
K9K1208D0C
K9K1208U0C
K9K1208Q0C
K9K1216Q0C
K9K12XXX0C-GCB0,JCB0/GIB0,JIB0
X16
X8
PIN CONFIGURATION (FBGA)
63-Ball FBGA (measured in millimeters)
PACKAGE DIMENSIONS
9.00
±
0.10
#A1
Side View
Top View
1
(
0.45
±
0.05
4
3
2
1
A
B
C
D
G
Bottom View
1
±
0
63-
0.45
±
0.05
0
1
±
0
0.80 x5= 4.00
0.80
5
0
(
0.10MAX
B
A
2
2.00
9.00
±
0.10
0.80 x9= 7.20
(Datum B)
(Datum A)
0.20
M
A B
0
0
6
9.00
±
0.10
E
F
H
(Top View)
(Top View)
R/B
/WE
/CE
Vss
ALE
/WP
/RE
CLE
NC
NC
NC
NC
Vcc
NC
NC
I/O0
I/O1
NC
NC
VccQ
I/O5
I/O7
Vss
I/O6
I/O4
I/O3
I/O2
Vss
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
LOCKPRE
NC
NC
N.C
N.C N.C
N.C
N.C N.C
N.C
N.C
N.C N.C
N.C
N.C
N.C N.C
N.C
N.C
N.C N.C
N.C
N.C N.C
N.C
N.C
N.C N.C
N.C
N.C
N.C N.C
N.C
R/B
/WE
/CE
Vss
ALE
/WP
/RE
CLE
I/O7
I/O5
I/O12 IO14
Vcc
I/O10
I/O8 I/O1
I/O9
I/O0
I/O3 VccQ
I/O6 I/O15
Vss
I/O13
I/O4
I/O11
I/O2
Vss
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
LOCKPRE
NC
NC
3
4
5
6
1 2
A
B
C
D
G
H
E
F
3
4
5
6
1 2
A
B
C
D
G
H
E
F
相關(guān)PDF資料
PDF描述
K9K1G08B0B 128M x 8 Bit NAND Flash Memory
K9K1G08R0B 128M x 8 Bit NAND Flash Memory
K9K1G08U0B 128M x 8 Bit NAND Flash Memory
K9K1G08Q0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K1208U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9K1208U0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9K1208U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9K1216D0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9K1216Q0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory