參數(shù)資料
型號： K9K2G08Q0M-Y
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
中文描述： 256M × 8位/ 128M的× 16位NAND閃存
文件頁數(shù)： 1/38頁
文件大小： 734K
代理商： K9K2G08Q0M-Y
FLASH MEMORY
1
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0
K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
Document Title
256M x 8 Bit / 128M x 16 Bit
NAND Flash Memory
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
Revision No
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Remark
Advance
History
1. Initial issue
1.
IO
L(R/B) of 1.8V device is changed.
-min. Value: 7mA -->3mA
-typ. Value: 8mA -->4mA
1. 5th cycle of ID is changed
: 40h --> 44h
1. Add WSOP Package Dimensions.
1. Max Icc value of 1.8V/3.3V device is changed.
- Max. value Icc1,Icc2,Icc3: 20mA --> 30mA (3.3V device)
- Max. value Icc1,Icc2,Icc3: 15mA --> 20mA (1.8V device)
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 35)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 36)
The min. Vcc value 1.8V devices is changed.
K9K2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Pb-free Package is added.
K9K2G08U0M-FCB0,FIB0
K9K2G08Q0M-PCB0,PIB0
K9K2G08U0M-PCB0,PIB0
K9K2G16U0M-PCB0,PIB0
K9K2G16Q0M-PCB0,PIB0
Errata is added.(Front Page)-K9K2GXXQ0M
tWC tWP tWH tRC tREH tRP tREA tCEA
Specification 45 25 15 50 15 25 30 45
Relaxed value 80 60 20 60 80 60 60 75
1. The 3rd Byte ID after 90h ID read command is don’t cared.
The 5th Byte ID after 90h ID read command is deleted.
1. Added Addressing method for program operation
Draft Date
Sep. 19.2001
Nov. 5. 2001
Jan. 23.2002
May. 29.2002
Sep. 12.2002
Nov. 22.2002
Mar. 6.2003
Mar. 13.2003
Mar. 17.2003
Apr. 9. 2003
Jan. 27. 2004
相關(guān)PDF資料
PDF描述
K9K2G08Q0M-YIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-FCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-FIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-PCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-PIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K2G08Q0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08R0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9K2G08R0A-JIB0000 制造商:Samsung 功能描述:2GB SLC DIE STACK X8 FBGA - Trays
K9K2G08U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit NAND Flash Memory
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