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參數(shù)資料
| 型號： | K9K2G08U0M-VCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| 中文描述： | 256M × 8位/ 128M的× 16位NAND閃存 |
| 文件頁數(shù)： | 17/38頁 |
| 文件大?。?/td> | 734K |
| 代理商： | K9K2G08U0M-VCB0 |
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FLASH MEMORY
17
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0
K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal
2112byte(X8 device) or 1056word(X16 device) data registers are utilized as separate buffers for this operation and the system
design gets more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activat-
ing CE during the data-loading and serial access would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
CE
WE
t
WP
t
CH
t
CS
Address(5Cycles)
80h
Data Input
CE
CLE
ALE
WE
Data Input
CE don’t-care
≈
≈
10h
Address(5Cycle)
00h
CE
CLE
ALE
WE
Data Output(serial access)
CE don’t-care
≈
R/B
t
R
RE
t
CEA
out
t
REA
CE
RE
I/O
0
~
7
Figure 5. Read Operation with CE don’t-care.
30h
I/Ox
I/Ox
相關PDF資料 |
PDF描述 |
|---|---|
| K9K2G08U0M-VIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-YIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16Q0M-PCB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16Q0M-P | ULTRA2 LVD SCSI INTERNAL CBL 3 |
| K9K2G16Q0M-Y | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9K2G08U0M-VIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U1A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
| K9K2G08X0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
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