參數(shù)資料
型號(hào)： K9K2G16Q0M-PCB0
廠(chǎng)商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
中文描述： 256M × 8位/ 128M的× 16位NAND閃存
文件頁(yè)數(shù)： 17/38頁(yè)
文件大小： 734K
代理商： K9K2G16Q0M-PCB0
FLASH MEMORY
17
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0
K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal
2112byte(X8 device) or 1056word(X16 device) data registers are utilized as separate buffers for this operation and the system
design gets more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activat-
ing CE during the data-loading and serial access would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
CE
WE
t
WP
t
CH
t
CS
Address(5Cycles)
80h
Data Input
CE
CLE
ALE
WE
Data Input
CE don’t-care
≈
≈
10h
Address(5Cycle)
00h
CE
CLE
ALE
WE
Data Output(serial access)
CE don’t-care
≈
R/B
t
R
RE
t
CEA
out
t
REA
CE
RE
I/O
0
~
7
Figure 5. Read Operation with CE don’t-care.
30h
I/Ox
I/Ox
相關(guān)PDF資料
PDF描述
K9K2G16Q0M-P ULTRA2 LVD SCSI INTERNAL CBL 3
K9K2G16Q0M-Y 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9W4G08U1M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9W4G16U1M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K2G16Q0M-PIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-Y 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-YCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-YIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
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