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參數(shù)資料
| 型號： | K9K2G16Q0M-YCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| 中文描述： | 256M × 8位/ 128M的× 16位NAND閃存 |
| 文件頁數(shù)： | 33/38頁 |
| 文件大?。?/td> | 734K |
| 代理商： | K9K2G16Q0M-YCB0 |
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FLASH MEMORY
33
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0
K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
Copy-Back Program
The copy-back program is configured to quickly and efficiently rewrite data stored in one page without utilizing an external memory.
Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved. The ben-
efit is especially obvious when a portion of a block is updated and the rest of the block also need to be copied to the newly assigned
free block. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copy-
ing-program with the address of destination page. A read operation with "35h" command and the address of the source page moves
the whole 2112byte(X8 device) or 1056word(X16 device) data into the internal data buffer. As soon as the device returns to Ready
state, Page-Copy Data-input command (85h) with the address cycles of destination page followed may be written. The Program Con-
firm command (10h) is required to actually begin the programming operation. Copy-Back Program operation is allowed only within the
same memory plane. Once the Copy-Back Program is finished, any additional partial page programming into the copied pages is pro-
hibited before erase. A27 must be the same between source and target page. Data input cycle for modifying a portion or multiple dis-
tant portions of the source page is allowed as shown in Figure 11.
"When there is a program-failure at Copy-Back operation, error
is reported by pass/fail status. But, if Copy-Back operations are accumulated over time, bit error due to charge loss is not
checked by external error detection/correction scheme. For this reason, two bit error correction is recommended for the use
of Copy-Back operation."
Figure 11. Page Copy-Back program Operation
00h
R/B
Add.(5Cycles)
I/O
0
Pass
85h
70h
Fail
t
PROG
Add.(5Cycles)
t
R
Source Address
Destination Address
35h
NOTE
: Since programming the last page does not employ caching, the program time has to be that of Page Program. However, if the
previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated only after comple-
tion of the previous cycle, which can be expressed as the following formula.
tPROG= Program time for the last page+ Program time for the ( last -1 )th page
- (Program command cycle time + Last page data loading time)
10h
Figure 12. Page Copy-Back program Operation with Random Data Input
00h
R/B
Add.(5Cycles)
85h
70h
t
PROG
Add.(5Cycles)
t
R
Source Address
Destination Address
Data
35h
10h
85h
Data
Add.(2Cycles)
There is no limitation for the number of repetition.
I/Ox
I/Ox
Col. Add1,2 & Row Add1,2,3
Col. Add1,2 & Row Add1,2,3
Col. Add1,2 & Row Add1,2,3
Col. Add1,2 & Row Add1,2,3
Col Add1,2
相關PDF資料 |
PDF描述 |
|---|---|
| K9K2G08U0M-YCB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-P | DSUB 25 M PCR/A G |
| K9K2G08Q0M-PCB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-PIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16Q0M-PIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9K2G16Q0M-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16U0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16U0M-PCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16U0M-PIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16U0M-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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