參數(shù)資料
型號： K9K2G16U0M-PIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
中文描述： 256M × 8位/ 128M的× 16位NAND閃存
文件頁數(shù)： 6/38頁
文件大?。?/td> 734K
代理商： K9K2G16U0M-PIB0
FLASH MEMORY
6
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0
K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
PIN DESCRIPTION
NOTE
: Connect all V
CC
and V
SS
pins of each device to common power supply outputs.
Do not leave V
CC
or V
SS
disconnected.
Pin Name
Pin Function
I/O
0
~ I/O
7
(K9K2G08X0M)
I/O
0
~ I/O
15
(K9K2G16X0M)
DATA INPUTS/OUTPUTS
The I/O pins are used to input command, address and data, and to output data during read operations. The I/
O pins float to high-z when the chip is deselected or when the outputs are disabled.
I/O8 ~ I/O15 are used only in X16 organization device. Since command input and address input are x8 oper-
ation, I/O8 ~ I/O15 are not used to input command & address. I/O8 ~ I/O15 are used only for data input and
output.
CLE
COMMAND LATCH ENABLE
The CLE input controls the activating path for commands sent to the command register. When active high,
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.
ALE
ADDRESS LATCH ENABLE
The ALE input controls the activating path for address to the internal address registers. Addresses are
latched on the rising edge of WE with ALE high.
CE
CHIP ENABLE
The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and
the device does not return to standby mode in program or erase opertion. Regarding CE control during read
operation, refer to ’Page read’ section of Device operation .
RE
READ ENABLE
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid
tREA after the falling edge of RE which also increments the internal column address counter by one.
WE
WRITE ENABLE
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of
the WE pulse.
WP
WRITE PROTECT
The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage
generator is reset when the WP pin is active low.
R/B
READY/BUSY OUTPUT
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or
random read operation is in process and returns to high state upon completion. It is an open drain output and
does not float to high-z condition when the chip is deselected or when outputs are disabled.
PRE
POWER-ON READ ENABLE
The PRE controls auto read operation executed during power-on. The power-on auto-read is enabled when
PRE pin is tied to Vcc.
Vcc
POWER
V
CC
is the power supply for device.
Vss
GROUND
N.C
NO CONNECTION
Lead is not internally connected.
相關(guān)PDF資料
PDF描述
K9K2G16U0M-YCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M-YIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-YCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-YCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-YCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K2G16U0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K4G08Q0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K4G08U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K4G08U0M-PIB0T00 制造商:Samsung Semiconductor 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*