參數資料
型號: KFG1216D2A-DEB6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁數: 41/114頁
文件大?。?/td> 1382K
代理商: KFG1216D2A-DEB6
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
41
This Read/Write register describes the system configuration.
F221h, default = 40C0h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R
R
RM
BRL
BL
ECC
RDY
pol
INT
pol
IOBE
RDY
Conf
Reserved(000)
BWPS
Read Mode (RM)
RM
Read Mode
0
Asynchronous read(default)
1
Synchronous read
Read Mode Information[15]
Item
Definition
Description
RM
Read Mode
Selects between asynchronous read mode and
synchronous read mode
Burst Read Latency (BRL)
BRL
Latency Cycles
000
8(N/A)
001
9(N/A)
010
10(N/A)
011
3(up to 40MHz)
100
4(default, min.)
101
5
110
6
111
7
Burst Read Latency (BRL) Information[14:12]
Item
Definition
Description
BRL
Burst Read Latency
Specifies the access latency in the burst read
transfer after the initial access
2.8.19 System Configuration 1 Register F221h (R, R/W)
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KFG1216D2A-DED5 FLASH MEMORY
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KFG1216D2A-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216D2A-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216D2A-DIB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216D2A-DIB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216D2A-DID5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY