參數(shù)資料
型號： KFG1216D2A-DID6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 13/114頁
文件大?。?/td> 1382K
代理商： KFG1216D2A-DID6
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
13
BootRAM
H
CLK
CE
OE
WE
RP
AVD
StateMachine
Bootloader
Internal Registers
(Address/Command/Configuration
/Status Registers)
Error
Correction
Logic
INT
DataRAM0
BufferRAM
NAND Flash
Array
OTP
(One Block)
RDY
A15~A0
DQ15~DQ0
2.6 Memory Array Organization
The OneNAND architecture integrates several memory areas on a single chip.
2.6.1 Internal (NAND Array) Memory Organization
The on-chip internal memory is a single-level-cell (SLC) NAND array used for data storage and code. The internal memory is divided
into a main area and a spare area.
Main Area
The main area is the primary memory array. This main area is divided into Blocks of 64 Pages. Within a Block, each Page is 2KB and
is comprised of 4 Sectors. Within a Page, each Sector is 512B and is comprised of 256 Words.
Spare Area
The spare area is used for invalid block information and ECC storage. Spare area of internal memory is associated with correspond-
ing main area of internal memory. Within a Block, each Page has four 16B Sectors of spare area. Each spare area Sector is 8 words.
DataRAM1
2.5 Block Diagram
相關(guān)PDF資料
PDF描述
KFG1216D2A-FEB5 FLASH MEMORY
KFG1216D2A-FEB6 FLASH MEMORY
KFG1216D2A-FED5 FLASH MEMORY
KFG1216D2A-FED6 FLASH MEMORY
KFG1216D2A-FIB5 FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFG1216D2A-FEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216D2A-FEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216D2A-FED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216D2A-FED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216D2A-FIB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
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