參數(shù)資料
型號： KFG1216D2A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 3/114頁
文件大?。?/td> 1382K
代理商： KFG1216D2A
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
3
Document Title
OneNAND
Revision History
Revision No.
0.0
0.1
0.2
0.3
0.4
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Draft Date
Nov. 4, 2004
Dec. 7, 2004
Dec. 24, 2004
Jan. 13, 2005
Feb. 25, 2005
History
Initial issue.
1. Corrected Errata
2. Revised cache read flow chart
3. Revised standby current
4. Revised spare area description
5. Added CE don’t care state for Asynch Write, Load, Program, and Block
Erase timing diagram
1. Added Copy Back Operation with Random Data Input
2. Changed tBA from 11ns to 11.5ns
3. Pended Active Erase Current
1. Corrected the errata
2. Revised typical value of ISB from 50uA to 10uA
3. Revised maximum value of ISB from 100uA to 50uA
4. Revised maximum value of tCE, tAA and tACC from 70ns to 76ns
5. Revised Vcc-IO description
6. Revised Spare Area description
7. Added extra information on Controller Status Register
8. Added commands related to Interrupt Status Register bits
9. Revised Write Protection Status on Chapter 3.4.3
10. Revised Copy-Back Program Operation description
11. Added extra information on Multi-Block Erase Operation
12. Disabled FBA restriction in OTP operation
13. Revised Cache Read Flow Chart
14. Revised Reset Parameter descriptions
15. Added RDY information on Warm Reset Timing diagram
16. Added information on Data Protection Timing During Power Down
17. Revised Interrupt pin rise and falling slope graph
18. Added restriction on address register setting on Dual Operations
19. Added restriction on address register setting on Cache Read Operation
1. Corrected the errata
2. Updated DC parameters to RMS values
3. Added Speed Information on Product Number
4. Revised tOEZ description
5. Revised OTP register setting restriction
6. Added Boot Sequence Infrormation on Technical Notes
7. Added Cint Information
1.1 Revision History
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參數(shù)描述
KFG1216D2A-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216D2A-DEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216D2A-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216D2A-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216D2A-DIB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
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