參數(shù)資料
型號： KFG1216Q2A-DIB6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 70/114頁
文件大?。?/td> 1382K
代理商： KFG1216Q2A-DIB6
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
70
The Copy-Back steps shown in the flow chart are:
Data is read from the NAND Array using Flash Block Address (FBA), Flash Page Address (FPA) and
Flash Sector Address (FSA). FBA, FPA, and FSA identify the source address to read data from NAND Flash array.
The BufferRAM Sector Count (BSC) and BufferRAM Sector Address (BSA) identifies how many sectors
and the location of the sectors in DataRAM that are used.
The destination address in the NAND Array is written using the Flash Copy-Back Block Address (FCBA),
Flash Copy-Back Page Address (FCPA), and Flash Copy-Back Sector Address (FCSA).
The Copy-Back Program command is issued to start programming.
Upon completion of copy-back programming to the destination page address, the Host checks the status
to see if the operation was successfully completed. If there was an error, map out the block including the
page in error and copy the target data to another block.
相關PDF資料
PDF描述
KFG1216Q2A-DID5 FLASH MEMORY
KFG1216Q2A-DID6 FLASH MEMORY
KFG1216Q2A-FEB5 FLASH MEMORY
KFG1216Q2A-FEB6 FLASH MEMORY
KFG1216Q2A-FED5 FLASH MEMORY
相關代理商/技術參數(shù)
參數(shù)描述
KFG1216Q2A-DID5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216Q2A-DID6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216Q2A-FEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216Q2A-FEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216Q2A-FED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
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