參數(shù)資料
型號： KFG1216Q2A-FID5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 10/114頁
文件大小： 1382K
代理商： KFG1216Q2A-FID5
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
10
B (capital letter)
Byte, 8bits
W (capital letter)
Word, 16bits
b (lower-case letter)
Bit
ECC
Error Correction Code
Calculated ECC
ECC that has been calculated during a load or program access
Written ECC
ECC that has been stored as data in the NAND Flash array or in the BufferRAM
BufferRAM
On-chip internal buffer consisting of BootRAM and DataRAM
BootRAM
A 1KB portion of the BufferRAM reserved for Boot Code buffering
DataRAM
A 4KB portion of the BufferRAM reserved for Data buffering
Sector
Part of a Page ; 512B for the main data area and 16B for the spare area.
It is also the minimum Load/Program/Copy-Back Program unit
during a 1~4 sector operation is available.
Data unit
Possible data unit to be read from memory to BufferRAM or to be programmed to memory.
- 528B of which 512B is in main area and 16B in spare area
- 1056B of which 1024B is in main area and 32B in spare area
- 1584B of which 1536B is in main area and 48B in spare area
- 2112B of which 2048B is in main area and 64B in spare area
2.2 Definitions
相關(guān)PDF資料
PDF描述
KFG1216Q2A-FID6 FLASH MEMORY
KFG1216U2A FLASH MEMORY
KFG1216U2A-FEB6 FLASH MEMORY
KFG1216U2A-FED5 FLASH MEMORY
KFG1216U2A-FED6 FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFG1216Q2A-FID6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216Q2M-DEB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216Q2M-DED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216Q2M-DIB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216Q2M-DID 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
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