參數(shù)資料
型號: KFG1216U2A-DEB6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁數(shù): 39/114頁
文件大?。?/td> 1382K
代理商: KFG1216U2A-DEB6
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
39
This Read/Write register describes the BufferRAM Sector Count (BSC) and BufferRAM Sector Address (BSA).
The BufferRAM Sector Count (BSC) field specifies the number of sectors to be loaded, programmed, or copy back programmed. At
00 value (the default value), the number of sector is "4". If the internal RAM buffer reaches its maximum value of 11, it will count up to
0 value to meet the BSC value. For example, if BSA = 1101, BSC = 00, then the selected BufferRAM will count up from '1101
1110
1111
1100'.
The BufferRAM Sector Address (BSA) is the sector 0~3 address in the internal BootRAM and DataRAM where data is placed.
F200h, default = 0000h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(0000)
BSA
Reserved(000000)
BSC
Start Address8 Information
Item
Description
BSA[3]
Selection bit between BootRAM and DataRAM
BSA[2]
Selection bit between DataRAM0 and DataRAM1
BSA[1:0]
Selection bit between Sector0 and Sector1 in the internal BootRAM
Selection bit between Sector0 to Sector3 in the internal DataRAM
BootRAM 0
BootRAM 1
BootRAM
Sector: (512 + 16) Byte
DataRAM 1_0
DataRAM 1_1
DataRAM 1_2
DataRAM 1_3
DataRAM1
0000
0001
1100
1101
1110
1111
BSC
Number of Sectors
01
1 sector
10
2 sector
11
3 sector
00
4 sector
{
Main area data
512B
Spare area data
16B
BSA
DataRAM 0_0
DataRAM 0_1
DataRAM 0_2
DataRAM 0_3
DataRAM0
1000
1001
1010
1011
2.8.17 Start Buffer Register F200h (R/W)
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