- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄373124 > KFG1216U2A-DIB6 (SAMSUNG SEMICONDUCTOR CO. LTD.) FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號(hào)： | KFG1216U2A-DIB6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FLASH MEMORY |
| 中文描述： | 閃存 |
| 文件頁(yè)數(shù)： | 90/114頁(yè) |
| 文件大?。?/td> | 1382K |
| 代理商： | KFG1216U2A-DIB6 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)當(dāng)前第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
90
4.1 Absolute Maximum Ratings
NOTES
:
1. Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level should not fall to POR level(typ. 1.5V@1.8V device, 1.8V@2.65V/
3.3V device). Maximum DC voltage is Vcc+0.6V on input / output pins which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
Vcc
Vcc (for 1.8V)
-0.5 to + 2.45
V
Vcc (for 2.65V/3.3V)
-0.5 to + 4.6
All Pins
V
IN
(for 1.8V)
V
IN
(for 2.65V/3.3V)
-0.5 to + 2.45
-0.5 to + 4.6
Temperature Under Bias
Extended
T
bias
-30 to +125
°
C
Industrial
-40 to +125
Storage Temperature
T
stg
-65 to +150
°
C
Short Circuit Output Current
I
OS
5
mA
Recommended Operating Temperature
T
A
(Extended Temp.)
-30 to +85
°
C
T
A
(Industrial Temp.)
-40 to +85
4.2 Operating Conditions
4.0 DC CHARACTERISTICS
Voltage reference to GND
NOTES
:
1. The system power should reach 1.7V after POR triggering level(typ. 1.5V) within 400us.
For 2.65V and 3.3V device, the system power should reach 2.2V after POR triggering level(typ. 1.8V) within 400us.
2. Vcc-Core (or Vcc) should reach the operating voltage level prior to or at the same time as Vcc-IO (or Vccq).
Parameter
Symbol
1.8V Device
2.65V Device
3.3V Device
Unit
Min
Typ.
Max
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC-
core / Vcc
1.7
1.8
1.95
2.4
2.65
2.9
2.7
3.3
3.6
V
V
CC-
IO / Vccq
V
SS
0
0
0
0
0
0
0
0
0
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KFG1216U2A-DID5 | FLASH MEMORY |
| KFG1216U2A-DID6 | FLASH MEMORY |
| KFG1216U2A-FEB5 | FLASH MEMORY |
| KFG1216Q2A-FED6 | FLASH MEMORY |
| KFG1216Q2A-FIB5 | FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFG1216U2A-DIB6000 | 制造商:Samsung Semiconductor 功能描述:512 DE-MUXED SLC W/ X16 FBGA - Trays |
| KFG1216U2A-DID5 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY |
| KFG1216U2A-DID6 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY |
| KFG1216U2A-FEB5 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY |
| KFG1216U2A-FEB6 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。