參數(shù)資料
型號： KFG1216U2A-FEB5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 79/114頁
文件大?。?/td> 1382K
代理商： KFG1216U2A-FEB5
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
79
An OTP Program Operation accesses the OTP area and programs content from the DataRAM on-chip buffer to the designated
page(s) of the OTP.
A memory location in the OTP area can be programmed only one time (no erase operation permitted).
The OTP area is programmed using the same sequence as normal program operation after being accessed by the command (see
section 3.8 for more information).
Programming the OTP Area
Issue the OTP Access Command
Write data into the DataRAM (data can be input at anytime between the "Start" and "Write Program" commands
Issue a Flash Block Address (FBA) which is unlocked area address of NAND Flash Array address map.
Issue a Write Program command to program the data from the DataRAM into the OTP
When the OTP programming is complete, do a Cold-, Warm-, Hot-, NAND Flash Core Reset to exit the OTP Access mode.
3.11.2 OTP Program Operation
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相關代理商/技術參數(shù)
參數(shù)描述
KFG1216U2A-FEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216U2A-FED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216U2A-FED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216U2A-FIB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216U2A-FIB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
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