參數(shù)資料
型號: KFG1G16D2M-DEB
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: RSM, TKF 15K 1/16W 5% 040
中文描述: 閃存
文件頁數(shù): 79/93頁
文件大?。?/td> 1219K
代理商: KFG1G16D2M-DEB
OneNAND512/OneNAND1GDDP
FLASH MEMORY
79
SWITCHING WAVEFORMS
NOTE:
In order to avoid a bus conflict the OE signal is enabled on the next rising edge after AVD is going high.
5 cycles for initial access shown.
BRL=4
t
CES
t
AVDS
t
AVDH
t
ACS
t
ACH
t
IAA
t
BA
t
BDH
t
CLK
CE
CLK
AVD
OE
DQ0-DQ15
A0-A15
D6
D7
D0
D1
D2
D3
D7
t
RDYA
Figure 27. Continuous Linear Burst Mode with Wrap Around
t
OE
Figure 26. 8 Word Linear Burst Mode with Wrap Around
t
CEZ
t
OEZ
D0
t
CLKH
t
CLKL
t
RDYO
t
CER
5 cycles for initial access shown.
BRL=4
t
CES
t
AVDS
t
AVDH
t
ACS
t
ACH
t
IAA
t
BA
t
BDH
t
CLK
Hi-Z
CE
CLK
AVD
OE
DQ0-DQ15
RDY
A0-A15
t
RDYS
Da
Da+1
Da+2
Da+3
Da+4
Da+5
Da+n
t
RDYA
t
OE
t
CEZ
t
OEZ
Da+n+1
Hi-Z
t
RDYO
t
CER
Hi-Z
RDY
t
RDYS
Hi-Z
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