參數(shù)資料
型號(hào)： KFG1G16Q2M-DEB6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY(66MHz)
中文描述： 閃存（66MHz的）
文件頁數(shù)： 102/125頁
文件大?。?/td> 1632K
代理商： KFG1G16Q2M-DEB6
OneNAND1G(KFG1G16Q2M-DEB6)
FLASH MEMORY
102
OneNAND2G(KFH2G16Q2M-DEB6)
OneNAND4G(KFW4G16Q2M-DEB6)
5.1 AC Test Conditions
Parameter
Value
Input Pulse Levels
0V to V
CC
Input Rise and Fall Times
CLK
3ns
other inputs
5ns
Input and Output Timing Levels
V
CC
/2
Output Load
C
L
= 30pF
0V
V
CC
V
CC
/2
V
CC
/2
Input Pulse and Test Point
Input & Output
Test Point
Output Load
Device
Under
Test
* C
L
= 30pF including scope
and Jig capacitance
5.2 Device Capacitance
CAPACITANCE
(T
A
= 25
°
C, V
CC
= 1.8V, f = 1.0MHz)
NOTES:
1. The
device
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
.
Do not erase or program
factory-marked bad blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block.
* Each KFG1G16Q2M chip in the KFH2G16Q2M has Maximum 20 invalid blocks.
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number (Single)
N
VB
1004
-
1024
Blocks
Valid Block Number (DDP)
N
VB
2008
-
2048
Blocks
Valid Block Number (QDP)
N
VB
4016*
-
4096*
Blocks
5.3 Valid Block Characteristics
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condi-
tion
Single
DDP
QDP
Unit
Min
Max
Min
Max
Min
Max
Input Capacitance
C
IN1
V
IN
=0V
-
10
-
20
-
40
pF
Control Pin Capacitance
C
IN2
V
IN
=0V
-
10
-
20
-
40
Output Capacitance
C
OUT
V
OUT
=0V
-
10
-
20
-
40
INT Capacitance
C
INT
V
OUT
=0V
-
15
-
30
-
60
5.0 AC CHARACTERISTICS
相關(guān)PDF資料
PDF描述
KFW4G16Q2M-DED6 FLASH MEMORY(66MHz)
KFW4G16Q2M FLASH MEMORY(66MHz)
KFG1G16Q2M-DEB FLASH MEMORY
KFG1G16Q2M-DED FLASH MEMORY
KFG1G16Q2M-DIB FLASH MEMORY
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KFG1G16Q2M-DED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
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KFG1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG1G16Q2M-DIB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
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