參數(shù)資料
型號: KFG1G16U2M-DIB5
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY(54MHz)
中文描述: 閃存(54MHz之間)
文件頁數(shù): 53/125頁
文件大?。?/td> 1657K
代理商: KFG1G16U2M-DIB5
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
53
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
I/O Buffer Enable (IOBE)
IOBE is the I/O Buffer Enable for the INT and RDY signals. At startup, INT and RDY outputs are High-Z. Bits 6 and 7 become valid
after IOBE is set to "1". IOBE can be reset by a Cold Reset or by writing "0" to bit 5 of System Configuration1 Register.
I/O Buffer Enable Information[5]
Item
Definition
Description
IOBE
I/O Buffer Enable for INT and
RDY signals
0 = disable (default)
1 = enable
Boot Buffer Write Protect Status (BWPS)
Boot Buffer Write Protect Status Information[0]
Item
Definition
Description
BWPS
Boot Buffer Write Protect Status
0 = locked (fixed)
RDY Configuration (RDY conf)
RDY Configuration Information[4]
Item
Definition
Description
RDY conf
RDY configuration
0=active one clock before valid data(default)
1=active with valid data
相關(guān)PDF資料
PDF描述
KFG1G16Q2M-DIB5 FLASH MEMORY(54MHz)
KFH1G1612M-DED5 FLASH MEMORY(54MHz)
KFH2G1612M-DED5 FLASH MEMORY(54MHz)
KFH2G16D2M-DEB5 FLASH MEMORY(54MHz)
KFH2G16D2M-DEB6 FLASH MEMORY(54MHz)
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