參數(shù)資料
型號: KFG2G16D2M-DIB6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY(54MHz)
中文描述: 閃存(54MHz之間)
文件頁數(shù): 5/125頁
文件大小: 1657K
代理商: KFG2G16D2M-DIB6
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
5
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
Samsung offers a variety of Flash solutions including NAND Flash, OneNAND
and NOR Flash. Samsung offers Flash products
both component and a variety of card formats including RS-MMC, MMC, CompactFlash, and SmartMedia.
To determine which Samsung Flash product solution is best for your application, refer the product selector chart.
Application Requires
Samsung Flash Products
NAND
OneNAND
NOR
Fast Random Read
Fast Sequential Read
Fast Write/Program
Multi Block Erase
(Max 64 Blocks)
Erase Suspend/Resume
Copyback
(EDC)
(ECC)
Lock/Unlock/Lock-Tight
ECC
External (Hardware/Software)
Internal
X
Scalability
1.3 Ordering Information
K F x x x 1 6 Q 2 M - D E B 5
Samsung
OneNAND Memory
Device Type
G : Single Chip
H : Dual Chip
W: Quad Chip
Density
1G: 1Gb
2G: 2Gb
4G: 4Gb
Operating Temperature Range
E = Extended Temp. (-30
°
C to 85
°
C)
Page Architecture
2 : 2KB Page
Version
1st Generation
Product Line desinator
B : Include Bad Block
D : Daisy Sample
Operating Voltage Range
Q : 1.8V(1.7 V to 1.95V)
Package
D : FBGA(Lead Free)
Organization
x16 Organization
Speed
5 : 54MHz
6 : 66MHz
1.2 Flash Product Type Selector
相關(guān)PDF資料
PDF描述
KFG2G16D2M-DID5 FLASH MEMORY(54MHz)
KFG2G16D2M-DID6 FLASH MEMORY(54MHz)
KFG2G16Q2M-DED5 FLASH MEMORY(54MHz)
KFG2G16Q2M-DED6 FLASH MEMORY(54MHz)
KFG2G16Q2M-DIB6 FLASH MEMORY(54MHz)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFG2G16D2M-DID5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG2G16D2M-DID6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG2G16Q2A-DEB8000 制造商:Samsung SDI 功能描述:NAND Flash Parallel/Serial 1.8V 2Gbit 128M x 16bit 76ns 63-Pin FBGA Tray
KFG2G16Q2M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG2G16Q2M-DEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)