參數(shù)資料
型號(hào): KFG4G1612M-DEB5
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Coaxial Cable; Coaxial RG/U Type:59; Impedance:75ohm; Conductor Size AWG:20; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Voltage Nom.:600V RoHS Compliant: Yes
中文描述: 閃存(54MHz之間)
文件頁數(shù): 125/125頁
文件大?。?/td> 1657K
代理商: KFG4G1612M-DEB5
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
125
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
4G product (KFW4G16Q2M)
0.10 MAX
0
±
0.32
±0.05
1.3
±0.10
BOTTOM VIEW
TOP VIEW
A
B
C
D
E
F
G
H
0.80x9=7.20
A
0
63-
0.45
±0.05
4
0
B
0.20
M
A B
(Datum A)
(Datum B)
2
5
4
3
1
6
3.60
#A1 INDEX
11.00
±0.10
1
±
#A1
1
±
0.80
11.00
±0.10
1
±
相關(guān)PDF資料
PDF描述
KFH1G1612M-DEB5 Coaxial Cable; Coaxial RG/U Type:223; Impedance:50ohm; Conductor Size AWG:19; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Voltage Nom.:600V RoHS Compliant: Yes
KFW4G1612M-DEB5 FLASH MEMORY(54MHz)
KFW4G1612M-DED5 FLASH MEMORY(54MHz)
KFW4G16D2M-DEB5 FLASH MEMORY(54MHz)
KFW4G16D2M-DEB6 FLASH MEMORY(54MHz)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFG4G1612M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG4G16D2M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG4G16D2M-DEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG4G16D2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG4G16D2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)