參數(shù)資料
型號： KFH1G16D2M-DED5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY(54MHz)
中文描述： 閃存（54MHz之間）
文件頁數(shù)： 59/93頁
文件大小： 1219K
代理商： KFH1G16D2M-DED5
OneNAND512/OneNAND1GDDP
FLASH MEMORY
59
* DBS, DFS is for DDP
Figure 20. OTP program operation flow-chart
2) Data input could be done anywhere between "Start" and "Write Program Command".
3) FBA should point the unlocked area address among NADND Flash Array address map.
Note 1) FBA(NAND Flash Block Address) could be any address.
OTP Programming(OTP Access+Program NAND)
OTP area could be programmed with the same sequence as normal program operation after being accessed by the command. But in
case of OTP area program, OTP area is not a real OTP area but can be programmed more than once. And 2 command sequence is
used to avoid the accidental write. To avoid the accidental write, FBA should point the unlocked area address among NAND Flash
Array address map even though OTP area is separated from NAND Flash Array.
Write ’DFS*, FBA’ of Flash
2)
Add: F100h DQ=DFS*’, FBA
Start
Write ’OTP Access’ Command
Add: F220h DQ=0075h
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
OTP Programming completed
Write Program command
DQ=0080h or 001Ah
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Add: F220h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
OTP Exit
Write ’FBA’ of Flash
Add: F100h DQ=FBA
3)
Select DataRAM for DDP
Add: F101h DQ=DBS*
Data Input
Completed
Write Data into DataRAM
1)
Add: DP DQ=Data-in
NO
Do Cold/Warm/Hot
/NAND Flash Core reset
Write ’OTP Access’ Command
Add: F220h DQ=0065h
Write 0 to interrupt register
Add: F241h DQ=0000h
Write 0 to interrupt register
Add: F241h DQ=0000h
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