參數(shù)資料
型號(hào): KFH1G16Q2M-DED
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: .025 SOCKET STRIPS
中文描述: 閃存
文件頁(yè)數(shù): 53/93頁(yè)
文件大小: 1219K
代理商: KFH1G16Q2M-DED
OneNAND512/OneNAND1GDDP
FLASH MEMORY
53
Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most sig-
nificant bit) pages of the block. Random page address programming is prohibited.
From the LSB page to MSB page
DATA IN: Data (1)
Data (64)
(1)
(2)
(3)
(32)
(64)
Data register
Page 0
Page 1
Page 2
Page 31
Page 63
Ex.) Random page program (Prohibition)
DATA IN: Data (1)
Data (64)
(2)
(32)
(3)
(1)
(64)
Data register
Page 0
Page 1
Page 2
Page 31
Page 63
:
:
:
:
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