參數(shù)資料
型號： KFH1G16Q2M-DIB5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY(54MHz)
中文描述： 閃存（54MHz之間）
文件頁數(shù)： 66/93頁
文件大?。?/td> 1219K
代理商： KFH1G16Q2M-DIB5
OneNAND512/OneNAND1GDDP
FLASH MEMORY
66
Technical Notes
(Continued)
DDP Chip Selection Register
OneNAND DDP configuration does not require additional pins. NAND Flash Block Address is consecutive between LSB and MSB
chips. As seen in the figure below, the LSB Block Address ends at 01FFh(Block 511) and the MSB Block Address begins at
1000h(Block 512). The Device Flash Core Select (DFS) of Start Address 1 Register and the Device BufferRAM Select (DBS) of Start
Address 2 Register are used to select the desired LSB or MSB Flash Core and BufferRAM in the DDP.
Start Address1 Register (R/W): F100h, default=0000h
This Read/Write register is used to select the Flash Core of the LSB or MSB device (DFS).
DFS
(Device Flash Core Select): it selects Flash Core in two Flash Core of DDP
FBA
(NAND Flash Block Address): NAND Flash block address which will be read or programmed or erased.
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
DFS
Reserved(000000)
FBA
Start Address2 Register (R/W): F101h, default=0000h
This Read/Write register is used to select the BufferRAM of the LSB or MSB device (DBS).
DBS
(Device BufferRAM Select): it selects BufferRAM in two BufferRAM of DDP
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
DBS
Reserved(000000000000000)
Chip
Start Address1 Register
Block Number
LSB Chip
0000h ~ 01FFh
Block0 ~ Block511
MSB Chip
1000h ~ 11FFh
Block512 ~ Block1023
Block 0
Block 1
Block 510
Block 511
Block 512
Block 513
Block 1022
Block 1023
LSB Chip
MSB Chip
Figure 23. Flash Block Address Map in DDP
0000h
Start Address Register1
01FFh
1000h
11FFh
OneNAND DDP Technical Note
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