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參數(shù)資料
| 型號： | KFH1G16U2M-DEB |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FLASH MEMORY |
| 中文描述： | 閃存 |
| 文件頁數(shù)： | 86/125頁 |
| 文件大?。?/td> | 1657K |
| 代理商： | KFH1G16U2M-DEB |
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OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
86
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
Erase Resume
When the Erase Resume command is executed, the Block Erase will restart. The Erase Resume operation does not actually resume
the erase, but starts it again from the beginning.
When an Erase Suspend or Erase Resume command is executed, the addresses are in Don't Care state.
On Block of the NAND Flash Array memory is reserved as a One-Time Programmable Block memory area.
The OTP block can be read, programmed and locked using the same operations as any other NAND Flash Array memory block.
OTP block cannot be erased.
OTP block is fully-guaranteed to be a valid block.
Entering the OTP Block
The OTP block is separately accessible from the rest of the NAND Flash Array by using the OTP Access command instead of the
Flash Block Address (FBA).
Exiting the OTP Block
To exit the OTP Access Mode, a Cold-, Warm-, Hot-, or NAND Flash Core Reset operation is performed.
Exiting the OTP Block during an Erase Operation
If the Reset-triggered exit from the OTP Access Mode happens during an Erase Suspend Operation, the erase
routine could fail. Therefore to exit from the OTP Access Mode without suspending the erase operation stop, a
'NAND Flash Core Reset' command should be issued.
The OTP Block Page Assignments
OTP area is one block size (128KB+4KB, 64 Pages) and is divided into two areas. The 10-page User Area is available as an OTP
storage area. The 54-page Manufacturer Area is programmed by the manufacturer prior to shipping the device to the user.
OTP Block Page Allocation Information
Note) For DDP and QDP products, One block OTP is available in each chip. i.e. 2 OTP blocks in DDP, 4 OTP blocks in QDP
Area
Page
Use
User
0 ~ 9 (10 pages)
Designated as user area
Manufacturer
10 ~ 63 (54 pages)
Used by the device manufacturer
3.11 OTP Operation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KFG1G16Q2M-DEB6 | FLASH MEMORY(66MHz) |
| KFW4G16Q2M-DED6 | FLASH MEMORY(66MHz) |
| KFW4G16Q2M | FLASH MEMORY(66MHz) |
| KFG1G16Q2M-DEB | FLASH MEMORY |
| KFG1G16Q2M-DED | FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFH1G16U2M-DEB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFH1G16U2M-DEB6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFH1G16U2M-DED | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KFH1G16U2M-DED5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFH1G16U2M-DED6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
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