參數(shù)資料
型號： KFH2G16Q2M-DID5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY(54MHz)
中文描述： 閃存（54MHz之間）
文件頁數(shù)： 104/125頁
文件大小： 1657K
代理商： KFH2G16Q2M-DID5
OneNAND1G(KFG1G16Q2M-DEB5)
5.5 AC Characteristics for Asynchronous Read
FLASH MEMORY
104
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
NOTE:
1. If OE is disabled at the same time or before CE is disabled, the output will go to high-z by tOEZ.
If CE is disabled at the same time or before OE is disabled, the output will go to high-z by tCEZ.
If CE and OE are disabled at the same time, the output will go to high-z by tOEZ.
These parameters are not 100% tested.
Parameter
Symbol
KFG1G16Q2M/KFH2G16Q2M
/KFW4G16Q2M
Unit
Min
Max
Unit
Access Time from CE Low
t
CE
-
76
ns
Asynchronous Access Time from AVD Low
t
AA
-
76
ns
Asynchronous Access Time from address valid
t
ACC
-
76
ns
Read Cycle Time
t
RC
76
-
ns
AVD Low Time
t
AVDP
12
-
ns
Address Setup to rising edge of AVD
t
AAVDS
7
-
ns
Address Hold from rising edge of AVD
t
AAVDH
7
-
ns
Output Enable to Output Valid
t
OE
-
20
ns
WE disable to OE enable
t
OEH
0
-
ns
CE Setup to AVD falling edge
t
CA
0
-
ns
CE Disable to Output & RDY High Z
1)
t
CEZ
-
20
ns
OE Disable to Output High Z
t
OEZ
-
17
ns
WE Disable to AVD Enable
t
WEA
15
-
ns
5.6
AC Characteristics for Warm Reset (RP), Hot Reset
and NAND Flash Core Reset
See Timing Diagrams 6.12, 6.13 and 6.14
See Timing Diagrams 6.3, 6.4, 6.5 and 6.6
Note
1. These parameters are tested based on INT bit of interrupt register. Because the time on INT pin is related to the pull-up and pull-down resistor value.
2. The device may reset if tRP < tRP min(200ns), but this is not guaranteed.
Parameter
Symbol
Min
Max
Unit
RP & Reset Command Latch to BootRAM Access
tReady1
(BufferRAM)
-
5
μ
s
RP & Reset Command Latch(During Load Routines) to INT High (Note1)
tReady2
(NAND Flash Array)
-
10
μ
s
RP & Reset Command Latch(During Program Routines) to INT High (Note1)
tReady2
(NAND Flash Array)
-
20
μ
s
RP & Reset Command Latch(During Erase Routines) to INT High (Note1)
tReady2
(NAND Flash Array)
-
500
μ
s
RP & Reset Command Latch(NOT During Internal Routines) to INT High (Note1)
tReady2
(NAND Flash Array)
-
10
μ
s
RP Pulse Width (Note2)
tRP
200
-
ns
相關(guān)PDF資料
PDF描述
KFH2G16Q2M-DID6 FLASH MEMORY(54MHz)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFH2G16Q2M-DID6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFH2G16U2M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFH2G16U2M-DEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFH2G16U2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFH2G16U2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
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