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參數(shù)資料
| 型號(hào)： | KFH4G16D2M-DED5 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FLASH MEMORY(54MHz) |
| 中文描述： | 閃存（54MHz之間） |
| 文件頁(yè)數(shù)： | 67/125頁(yè) |
| 文件大?。?/td> | 1657K |
| 代理商： | KFH4G16D2M-DED5 |
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OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
67
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
The One NAND has 4 reset modes: Cold/Warm/Hot Reset, and NAND Flash Array Reset. Section 3.3 discusses the operation of
these reset modes.
The Register Reset Table shows the which registers are affected by the various types or Reset operations.
Internal Register Reset Table
NOTE:
1) RDYpol, INTpol, IOBE is reset by Cold reset. The other bits are reset by Cold/Warm/Hot reset.
2) ECC Status Register & ECC Result Registers are reset when any command is issued.
3) Refer to Device ID Register F001h.
Internal Registers
Default Cold Reset
Warm Reset
(RP)
Hot
Reset
(00F3h)
Hot
Reset
(BP-F0)
NAND Flash
Core Reset
(00F0h)
F000h
Manufacturer ID Register (R)
00ECh
N/A
N/A
N/A
N/A
F001h
Device ID Register (R): OneNAND
(Note 3)
N/A
N/A
N/A
N/A
F002h
Version ID Register (R): N/A
N/A
N/A
N/A
N/A
N/A
F003h
Data Buffer size Register (R)
0800h
N/A
N/A
N/A
N/A
F004h
Boot Buffer size Register (R)
0200h
N/A
N/A
N/A
N/A
F005h
Amount of Buffers Register (R)
0201h
N/A
N/A
N/A
N/A
F006h
Technology Register (R)
0000h
N/A
N/A
N/A
N/A
F100h
Start Address1 Register (R/W): FBA
0000h
0000h
0000h
0000h
N/A
F101h
Start Address2 Register (R/W): DBS
0000h
0000h
0000h
0000h
N/A
F102h
Start Address3 Register (R/W): FCBA
0000h
0000h
0000h
0000h
N/A
F103h
Start Address4 Register (R/W): FCPA, FCSA
0000h
0000h
0000h
0000h
N/A
F107h
Start Address8 Register (R/W): FPA, FSA
0000h
0000h
0000h
0000h
N/A
F200h
Start Buffer Register (R/W): BSA, BSC
0000h
0000h
0000h
0000h
N/A
F220h
Command Register (R/W)
0000h
0000h
0000h
0000h
N/A
F221h
System Configuration 1 Register (R/W)
40C0h
40C0h
(Note1)
(Note1)
N/A
F240h
Controller Status Register (R)
0000h
0000h
0000h
0000h
N/A
F241h
Interrupt Status Register (R/W)
-
8080h
8010h
8010h
N/A
F24Ch
Start Block Address (R/W)
0000h
0000h
0000h
N/A
N/A
F24Dh
End Block Address: N/A
N/A
N/A
N/A
N/A
N/A
F24Eh
NAND Flash Write Protection Status (R)
0002h
0002h
0002h
N/A
N/A
FF00h
ECC Status Register (R) (Note2)
0000h
0000h
0000h
0000h
N/A
FF01h
ECC Result of Sector 0 Main area data Register(R)
0000h
0000h
0000h
0000h
N/A
FF02h
ECC Result of Sector 0 Spare area data Register (R)
0000h
0000h
0000h
0000h
N/A
FF03h
ECC Result of Sector 1 Main area data Register(R)
0000h
0000h
0000h
0000h
N/A
FF04h
ECC Result of Sector 1 Spare area data Register (R)
0000h
0000h
0000h
0000h
N/A
FF05h
ECC Result of Sector 2 Main area data Register(R)
0000h
0000h
0000h
0000h
N/A
FF06h
ECC Result of Sector 2 Spare area data Register (R)
0000h
0000h
0000h
0000h
N/A
FF07h
ECC Result of Sector 3 Main area data Register(R)
0000h
0000h
0000h
0000h
N/A
FF08h
ECC Result of Sector 3 Spare area data Register (R)
0000h
0000h
0000h
0000h
N/A
3.3 Reset Mode Operation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KFH4G16D2M-DED6 | FLASH MEMORY(54MHz) |
| KFH4G16D2M-DIB5 | FLASH MEMORY(54MHz) |
| KFH4G16D2M-DIB6 | FLASH MEMORY(54MHz) |
| KFH4G16D2M-DID5 | FLASH MEMORY(54MHz) |
| KFH4G16D2M-DID6 | FLASH MEMORY(54MHz) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFH4G16D2M-DED6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFH4G16D2M-DIB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFH4G16D2M-DIB6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFH4G16D2M-DID5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFH4G16D2M-DID6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
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