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| 型號(hào)： | KFH4G16Q2M-DID5 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FLASH MEMORY(54MHz) |
| 中文描述： | 閃存（54MHz之間） |
| 文件頁(yè)數(shù)： | 41/125頁(yè) |
| 文件大?。?/td> | 1657K |
| 代理商： | KFH4G16Q2M-DID5 |
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OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
41
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
Section 2.8 of this specification provides information about the OneNAND1G registers.
2.8.1 Register Address Map
This map describes the register addresses, register name, register description, and host accessibility.
Address
(word order)
Address
(byte order)
Name
Host
Access
Description
F000h
1E000h
Manufacturer ID
R
Manufacturer identification
F001h
1E002h
Device ID
R
Device identification
F002h
1E004h
Version ID
R
N/A
F003h
1E006h
Data Buffer size
R
Data buffer size
F004h
1E008h
Boot Buffer size
R
Boot buffer size
F005h
1E00Ah
Amount of
buffers
R
Amount of data/boot buffers
F006h
1E00Ch
Technology
R
Info about technology
F007h~F0FFh
1E00Eh~1E1FEh
Reserved
-
Reserved for user
F100h
1E200h
Start address 1
R/W
Chip address for selection of NAND
Core in DDP & Block address
F101h
1E202h
Start address 2
R/W
Chip address for selection of BufferRAM in DDP
F102h
1E204h
Start address 3
R/W
Destination Block address for Copy back program
F103h
1E206h
Start address 4
R/W
Destination Page & Sector address for Copy
back program
F104h
1E208h
Start address 5
-
N/A
F105h
1E20Ah
Start address 6
-
N/A
F106h
1E20Ch
Start address 7
-
N/A
F107h
1E20Eh
Start address 8
R/W
NAND Flash Page & Sector address
F108h~F1FFh
1E210h~1E3FEh
Reserved
-
Reserved for user
F200h
1E400h
Start Buffer
R/W
Buffer Number for the page data transfer to/from the
memory and the start Buffer Address
The meaning is with which buffer to start and how many
buffers to use for the data transfer
F201h~F207h
1E402h~1E40Eh
Reserved
-
Reserved for user
F208h~F21Fh
1E410h~1E43Eh
Reserved
-
Reserved for vendor specific purposes
F220h
1E440h
Command
R/W
Host control and memory operation commands
F221h
1E442h
System
Configuration 1
R, R/W
Memory and Host Interface Configuration
F222h
1E444h
System
Configuration 2
-
N/A
F223h~F22Fh
1E446h~1E45Eh
Reserved
-
Reserved for user
F230h~F23Fh
1E460h~1E47Eh
Reserved
-
Reserved for vendor specific purposes
F240h
1E480h
Controller Status
R
Controller Status and result of memory operation
F241h
1E482h
Interrupt
R/W
Memory Command Completion Interrupt Status
F242h~F24Bh
1E484h~1E496h
Reserved
-
Reserved for user
F24Ch
1E498h
Start
Block Address
R/W
Start memory block address in Write Protection mode
2.8 Registers
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KFH4G16Q2M-DID6 | FLASH MEMORY(54MHz) |
| KFH4G16U2M-DED5 | FLASH MEMORY(54MHz) |
| KFH4G16U2M-DED6 | FLASH MEMORY(54MHz) |
| KFH4G16U2M-DIB5 | FLASH MEMORY(54MHz) |
| KFH4G16U2M-DIB6 | FLASH MEMORY(54MHz) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFH4G16Q2M-DID6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFH4G16U2M-DEB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFH4G16U2M-DEB6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFH4G16U2M-DED5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFH4G16U2M-DED6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
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