參數(shù)資料
型號: KFH4G16U2M-DED6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY(54MHz)
中文描述: 閃存(54MHz之間)
文件頁數(shù): 17/125頁
文件大小: 1657K
代理商: KFH4G16U2M-DED6
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
17
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
The on-chip external memory is comprised of 3 buffers used for Boot Code storage and data buffering.
The BootRAM is a 1KB buffer that receives Boot Code from the internal memory and makes it available to the host at start up.
There are two independent 2KB bi-directional data buffers, DataRAM0 and DataRAM1. These dual buffers enable the host to execute
simultaneous Read-While load, and Write-While-program operations after Boot Up. During Boot Up, the BootRam is used by the host
to initialize the main memory, and deliver boot code from NAND Flash core to host.
The external memory is divided into a main area and a spare area. Each buffer is the equivalent size of a Sector.
The main area data is 512B. The spare area data is 16B.
External Memory Array Information
Area
BootRAM
DataRAM0
DataRAM1
Total Size
1KB+32B
2KB+64B
2KB+64B
Number of Sectors
2
4
4
Sector
Main
512B
512B
512B
Spare
16B
16B
16B
Host
OTP Block
Nand Array
Boot code (1KB)
BootRAM (1KB)
DataRAM0 (2KB)
DataRAM1 (2KB)
External (BufferRAM)
Memory
Internal (Nand Array)
Memory
2.6.2 External (BufferRAM) Memory Organization
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFH4G16U2M-DIB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFH4G16U2M-DIB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFH4G16U2M-DID5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFH4G16U2M-DID6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFH63210 制造商:n/a 功能描述:Ships in 2 days