參數(shù)資料
型號： KFH4G16U2M-DID6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY(54MHz)
中文描述： 閃存（54MHz之間）
文件頁數(shù)： 10/125頁
文件大小： 1657K
代理商： KFH4G16U2M-DID6
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
10
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
B (capital letter)
Byte, 8bits
W (capital letter)
Word, 16bits
b (lower-case letter)
Bit
ECC
Error Correction Code
Calculated ECC
ECC that has been calculated during a load or program access
Written ECC
ECC that has been stored as data in the NAND Flash array or in the BufferRAM
BufferRAM
On-chip internal buffer consisting of BootRAM and DataRAM
BootRAM
A 1KB portion of the BufferRAM reserved for Boot Code buffering
DataRAM
A 4KB portion of the BufferRAM reserved for Data buffering
Sector
Part of a Page ; 512B for the main data area and 16B for the spare area.
It is also the minimum Load/Program/Copy-Back Program unit
during a 1~4 sector operation is available.
Data unit
Possible data unit to be read from memory to BufferRAM or to be programmed to memory.
- 528B of which 512B is in main area and 16B in spare area
- 1056B of which 1024B is in main area and 32B in spare area
- 1584B of which 1536B is in main area and 48B in spare area
- 2112B of which 2048B is in main area and 64B in spare area
2.2 Definitions
相關(guān)PDF資料
PDF描述
KFG2G1612M-DED5 FLASH MEMORY(54MHz)
KFH1G16U2M-DED6 FLASH MEMORY(54MHz)
KFH1G16U2M-DIB FLASH MEMORY
KFH1G16U2M-DIB5 FLASH MEMORY(54MHz)
KFH1G16U2M-DIB6 FLASH MEMORY(54MHz)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFH63210 制造商:n/a 功能描述:Ships in 2 days
KFH63212 制造商:n/a 功能描述:Ships in 2 days
KFH-632-12 制造商:Penn 功能描述:
KFH-632-12ET 制造商:PennEngineering (PEM) 功能描述:
KFH6324 制造商:n/a 功能描述:Ships in 2 days
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*