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| 型號(hào)： | KFN1G16Q2M-DEB6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | MuxOneNAND FLASH MEMORY |
| 中文描述： | MuxOneNAND閃存 |
| 文件頁(yè)數(shù)： | 3/124頁(yè) |
| 文件大小： | 1550K |
| 代理商： | KFN1G16Q2M-DEB6 |
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MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
3
Document Title
MuxOneNAND
Revision History
Revision No.
0.0
0.1
0.2
0.3
Remark
Draft
Advance
Preliminary
Preliminary
Draft Date
Dec. 3, 2003
May 19, 2004
Nov. 4, 2004
Jan. 10, 2005
History
Initial issue.
1. Corrected the errata
2. Added Data Protection Scheme during Power-down
3. ECC description is revised.
4. Added Read while Load and Write While Program diagram.
5. Revised and added OTP description.
6. Added Write Protection description
7. Added Multi Block Erase operation notes
8. Added NAND Array Memory Map
9. RDY Conf bit in System Configuration Register is added.
10. Controller Status Register is revised.
11. Added DC/AC parameters
12. Revised OTP area assignment
13. Added the Addressing for program operation
14. Added INT guidance
15. Added Reset descriptions.
16. Revised Status Flag
1. Updated all description with a new format
1. Corrected the errata
2. Revised typical value of ISB from 50uA to 10uA
3. Revised maximum value of ISB from 100uA to 50uA
4. Revised erase current as TBD
5. Revised maximum value of tCE, tAA and tACC from 70ns to 76ns
6. Revised Vcc-IO description
7. Revised Spare Area description
8. Added Version ID Register information
9. Added extra information on Controller Status Register
10. Added commands related to Interrupt Status Register bits
11. Revised Write Protection Status on Chapter 3.4.3
12. Revised Copy-Back Program Operation description
13. Added Copy-Back Program Operation with Random Data Input
14. Added extra information on Multi-Block Erase Operation
15. Disabled FBA restriction in OTP operation
16. Revised Cache Read Flow Chart
17. Added DQ6 Toggle Bit Information on Chapter 3.13
18. Added ISB information on DDP
19. Revised Reset Parameter descriptions
20. Added Asynchronous Write timing diagram
21. Added RDY information on Warm Reset Timing diagram
22. Added information on Data Protection Timing During Power Down
23. Added Toggle Bit Timing in Asynchronous Read timing diagram
24. Revised Interrupt pin rise and falling slope graph
25. Added restriction on address register setting on Dual Operations
26. Added restriction on address register setting on Cache Read Operation
27. Added Technical Note
1.1 Revision History
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KFM2G16Q2M-DEB6 | MuxOneNAND FLASH MEMORY |
| KFM1G16Q2M-DED5 | MuxOneNAND FLASH MEMORY |
| KFM1G16Q2M-DED6 | MuxOneNAND FLASH MEMORY |
| KFN2G16Q2M-DEB6 | MuxOneNAND FLASH MEMORY |
| KFN1G16Q2M-DED5 | MuxOneNAND FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFN1G16Q2M-DED5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY |
| KFN1G16Q2M-DED6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY |
| KFN2G16Q2M-DEB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY |
| KFN2G16Q2M-DEB6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY |
| KFN2G16Q2M-DED5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY |
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