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參數(shù)資料
| 型號： | KFW4G16Q2M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FLASH MEMORY(66MHz) |
| 中文描述： | 閃存（66MHz的） |
| 文件頁數(shù)： | 61/125頁 |
| 文件大?。?/td> | 1632K |
| 代理商： | KFW4G16Q2M |
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OneNAND1G(KFG1G16Q2M-DEB6)
FLASH MEMORY
61
OneNAND2G(KFH2G16Q2M-DEB6)
OneNAND4G(KFW4G16Q2M-DEB6)
ECC Information[15:0]
Item
Definition
Description
ERm0
1st selected sector of
the main BufferRAM
Status of errors in the 1st selected sector of the main BufferRAM
as a result of an ECC check during a load operation.
Also updated during a Bootload operation.
ERm1
2nd selected sector of
the main BufferRAM
Status of errors in the 2nd selected sector of the main BufferRAM
as a result of an ECC check during a load operation.
Also updated during a Bootload operation.
ERm2
3rd selected sector of
the main BufferRAM
Status of errors in the 3rd selected sector of the main BufferRAM
as a result of an ECC check during a load operation.
Also updated during a Bootload operation.
ERm3
4th selected sector of
the main BufferRAM
Status of errors in the 4th selected sector of the main BufferRAM
as a result of an ECC check during a load operation.
Also updated during a Bootload operation.
ERs0
1st selected sector of
the spare BufferRAM
Status of errors in the 1st selected sector of the spare BufferRAM
as a result of an ECC check during a load operation.
Also updated during a Bootload operation.
ERs1
2nd selected sector of
the spare BufferRAM
Status of errors in the 2nd selected sector of the spare BufferRAM
as a result of an ECC check during a load operation.
Also updated during a Bootload operation.
ERs2
3rd selected sector of
the spare BufferRAM
Status of errors in the 3rd selected sector of the spare BufferRAM
as a result of an ECC check during a load operation.
Also updated during a Bootload operation.
ERs3
4th selected sector of
the spare BufferRAM
Status of errors in the 4th selected sector of the spare BufferRAM
as a result of an ECC check during a load operation.
Also updated during a Bootload operation.
2.8.28 ECC Result of 1
st
Selected Sector, Spare Area Data
Register FF02h (R)
This Read register shows the Error Correction result for the 1st selected sector of the spare area data. ECClogSector0 is the error
position address for 1.5 words of 2nd and 3rd words in the spare area. ECCposIO0 is the error position address which selects 1 of 16
DQs. ECClogSector0 and ECCposIO0 are also updated at boot loading.
FF02h, default = 0000h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(0000000000)
ECClogSector0
ECCposIO0
This Read register shows the Error Correction result for the 1st selected sector of the main area data. ECCposWord0 is the error
position address in the Main Area data of 256 words. ECCposIO0 is the error position address which selects 1 of 16 DQs.
ECCposWord0 and ECCposIO0 are also updated at boot loading.
FF01h, default = 0000h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(0000)
ECCposWord0
ECCposIO0
2.8.27 ECC Result of 1
st
Selected Sector, Main Area Data
Register FF01h (R)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KFG1G16Q2M-DEB | FLASH MEMORY |
| KFG1G16Q2M-DED | FLASH MEMORY |
| KFG1G16Q2M-DIB | FLASH MEMORY |
| KFG1G16Q2M-DID | FLASH MEMORY |
| KFG2816D1M-PID | OneNAND SPECIFICATION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFW4G16Q2M-DEB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFW4G16Q2M-DEB6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(66MHz) |
| KFW4G16Q2M-DED5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFW4G16Q2M-DED6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFW4G16Q2M-DIB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
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