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參數(shù)資料
| 型號： | KM23C32101C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32M-Bit (4Mx8) CMOS MASK ROM(32M位 (4Mx8) CMOS掩膜ROM) |
| 中文描述： | 32兆位（4Mx8）的CMOS掩膜ROM（32兆位（4Mx8）的CMOS掩膜光盤） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 57K |
| 代理商： | KM23C32101C |
KM23C32101C
CMOS MASK ROM
ABSOLUTE MAXIMUM RATINGS
NOTE
: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to th
conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extendd periods may
affect device reliability.
Item
Symbol
Rating
Unit
Voltage on Any Pin Relative to V
SS
V
IN
-0.3 to +7.0
V
Temperature Under Bias
T
BIAS
-10 to +85
°
C
°
C
Storage Temperature
T
STG
-55 to +150
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to V
SS
, T
A
=0 to 70
°
C)
Item
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Supply Voltage
V
SS
0
0
0
V
DC CHARACTERISTICS
NOTE
: Minimum DC Voltage(V
IL
) is -0.3V an input pins. During transitions, this level may undershoot to -2.0V for periods<20ns.
Maximum DC voltage on input pins(V
IH
) is V
CC
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods<20ns.
Parameter
Symbol
Test Conditions
Min
Max
Unit
Operating Current
I
CC
OE=V
IL
, all outputs open
-
50
mA
Input Leakage Current
I
LI
V
IN
=0 to V
CC
-
10
μ
A
μ
A
Output Leakage Current
I
LO
V
OUT
=0 to V
CC
-
10
Input High Voltage, All Inputs
V
IH
2.2
V
CC
+0.3
V
Input Low Voltage, All Inputs
V
IL
-0.3
0.8
V
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
V
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
0.4
V
MODE SELECTION
OE
1Mode
Data
Power
H
Operating
High-Z
Active
L
Operating
Dout
Active
CAPACITANCE
(T
A
=25
°
C, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Output Capacitance
C
OUT
V
OUT
=0V
-
12
pF
Input Capacitance
C
IN
V
IN
=0V
-
12
pF
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