- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄374352 > KM23V32205BSG (SAMSUNG SEMICONDUCTOR CO. LTD.) 32M-Bit (2Mx16 /1Mx32) CMOS Mask ROM(32M位 (2Mx16 /1Mx32) CMOS掩膜ROM) PDF資料下載
參數(shù)資料
| 型號(hào)： | KM23V32205BSG |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32M-Bit (2Mx16 /1Mx32) CMOS Mask ROM(32M位 (2Mx16 /1Mx32) CMOS掩膜ROM) |
| 中文描述： | 32兆位（2Mx16 / 1Mx32）的CMOS掩模ROM（32兆位（2Mx16 / 1Mx32）的CMOS掩膜光盤(pán)） |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | KM23V32205BSG |
KM23V32205BSG
CMOS MASK ROM
Pin Name
Pin Function
A
0
- A
1
Page Address Inputs
A
2
- A
19
Address Inputs
Q
0
- Q
30
Data Outputs
Q
31
/A
-1
Output 31(Double word mode)/
LSB Address(Word mode)
WORD
Double word/Word mode selection
CE
Chip Enable
OE
Output Enable
V
CC
Power
V
SS
Ground
N.C
No Connection
32M-Bit (2Mx16 /1Mx32) CMOS MASK ROM
The KM23V32205BSG is a fully static mask programmable
ROM fabricated using silicon gate CMOS process technology,
and is organized either as 2,097,152x16 bit(word mode) or as
1,048,576x32 bit(double word mode) depending on WORD volt-
age level.(See mode selection table)
This device includes page read mode function, page read mode
allows 4 double words(or 8 words) of data to read fast in the
same page, CE and A
2
~ A
19
should not be changed.
This device operates with 3.0V or 3.3V power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23V32205BSG is packaged in a 70-SSOP.
GENERAL DESCRIPTION
FEATURES
Switchable organization
2,097,152 x 16(word mode)
1,048,576 x 32(double word mode)
Fast access time
Random Access : 100ns(Max.)
Page Access : 30ns(Max.)
4 double words/ 8 words page access
Supply voltage : single +3.0V/ single +3.3V
Current consumption
Operating : 60mA(Max.)
Standby :30
μ
A(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
-. KM23V32205BSG : 70-SSOP-500
A
19
X
A
0
, A
1
AND
DECODER
BUFFERS
A
2
Y
AND
DECODER
BUFFERS
MEMORY CELL
MATRIX
(1,048,576x32/
2,097,152x16)
SENSE AMP.
CONTROL
LOGIC
DATA OUT
BUFFERS
A
-1
CE
OE
WORD
.
.
.
.
.
.
.
.
Q
0
/Q
16
Q
15
/Q
31
. . .
PIN CONFIGURATION
A
0
A
1
A
2
A
3
A
4
A
5
V
CC
Q
0
Q
16
Q
1
Q
17
V
SS
V
CC
Q
2
Q
18
Q
3
Q
19
Q
4
Q
20
Q
5
Q
21
V
SS
V
CC
Q
6
Q
22
Q
7
Q
23
V
SS
A
6
A
7
A
8
A
9
A
10
A
11
A
12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
A
13
A
14
A
15
A
16
A
17
A
18
A
19
V
CC
Q
8
Q
24
Q
9
Q
25
V
CC
V
SS
Q
10
Q
26
Q
11
Q
27
Q
12
Q
28
Q
13
Q
29
V
CC
V
SS
Q
14
Q
30
Q
15
Q
31
/A
-1
V
SS
CE
OE
WORD
N.C
N.C
N.C
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
SSOP
KM23V32205BSG
FUNCTIONAL BLOCK DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM23V4000DETY | 4M-Bit (512Kx8) CMOS Mask ROM(4M位 (512Kx8) CMOS掩膜ROM) |
| KM23V4000DTY | 4M-Bit (512Kx8) CMOS Mask ROM(4M位 (512Kx8) CMOS掩膜ROM) |
| KM23V4000D | 4M-Bit (512Kx8) CMOS Mask ROM(4M位 (512Kx8) CMOS掩膜ROM) |
| KM23V4000DG | 4M-Bit (512Kx8) CMOS Mask ROM(4M位 (512Kx8) CMOS掩膜ROM) |
| KM23V4100DET | 4M-Bit (512Kx8 /256x16) CMOS Mask ROM(4M位(512Kx8 /256x16) CMOS掩膜ROM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM23V8105D | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM |
| KM23V8105DG | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM |
| KM23V8105G | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM |
| KM-23YC | 制造商:KINGBRIGHT 制造商全稱(chēng):Kingbright Corporation 功能描述:SOT-23 SURFACE MOUNT LED LAMP |
| KM-23YC-F | 制造商:Kingbright Corporation 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。