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參數(shù)資料
| 型號(hào)： | KM23V8100DET |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M位 (1Mx8 /512Kx16) CMOS掩膜ROM) |
| 中文描述： | 800萬(wàn)位（1Mx8 / 512Kx16）的CMOS掩模ROM（800萬(wàn)位（1Mx8 / 512Kx16）的CMOS掩膜光盤） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 58K |
| 代理商： | KM23V8100DET |
KM23V8100D(E)T
CMOS MASK ROM
Pin Name
Pin Function
A
0
- A
18
Address Inputs
Q
0
- Q
14
Data Outputs
Q
15
/A
-1
Output 15(Word mode)/
LSB Address(Byte mode)
BHE
Word/Byte selection
CE
Chip Enable
OE
Output Enable
V
CC
Power
V
SS
Ground
N.C
No Connection
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
The KM23V8100D(E)T is a fully static mask programmable
ROM fabricated using silicon gate CMOS process technology,
and is organized either as 1,048,576 x 8 bit(byte mode) or as
524,288 x 16 bit(word mode) depending on BHE voltage
level.(See mode selection table)
This device operates with 3.0V or 3.3V power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23V8100D(E)T is packaged in a 44-TSOP2.
GENERAL DESCRIPTION
FEATURES
Switchable organization
1,048,576 x 8(byte mode)
524,288 x 16(word mode)
Fast access time :
3.3V operation : 100ns(Max.)
3.0V operation : 120ns(Max.)
Supply voltage : single +3.0V single +3.3V
Current consumption
Operating : 30mA(Max.)
Standby : 30
μ
A(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
-. KM23V8100D(E)T : 44-TSOP2-400
A
18
X
AND
DECODER
BUFFERS
A
0
Y
AND
DECODER
BUFFERS
MEMORY CELL
MATRIX
(524,288x16/
1,048,576x8)
SENSE AMP.
CONTROL
LOGIC
DATA OUT
BUFFERS
A
-1
CE
OE
BHE
.
.
.
.
.
.
.
.
Q
0
/Q
8
Q
7
/Q
15
. . .
PIN CONFIGURATION
N.C
A
18
A
17
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
CE
V
SS
OE
Q
0
Q
8
Q
1
Q
9
Q
4
Q
12
Q
5
Q
13
Q
6
V
SS
Q
14
Q
7
Q
15
/A
-1
TSOP2
KM23V8100D(E)T
FUNCTIONAL BLOCK DIAGRAM
1
2
44
43
42
3
4
41
5
6
40
39
7
8
38
37
9
10
36
35
11
12
34
33
13
14
32
31
30
15
16
29
17
18
28
27
26
19
20
25
21
22
24
23
Q
2
Q
10
Q
3
Q
11
N.C
N.C
A
8
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
BHE
V
CC
PRODUCT INFORMATION
Product
Operating
Temp
Vcc
Range
Speed
(ns)
KM23V8100DT
0
°
C~70
°
C
-20
°
C~85
°
C
3.3V/3.0V
100/120
KM23V8100DET
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| KM23V8105D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM |
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