參數(shù)資料
型號: KM4132G271BQ(R)-7
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
中文描述: 128K的x 32位× 2銀行同步圖形RAM的LVTTL
文件頁數(shù): 23/51頁
文件大?。?/td> 1033K
代理商: KM4132G271BQ(R)-7
KM4132G271B
CMOS SGRAM
- 23
Rev. 2.4 (May 1998)
1. t
RDL
: 1 CLK, Last Data in to Row Precharge.
2. t
BDL
: 1 CLK, Last Data in to Burst Stop Delay.
3. Number of valid output data after Row precharge or burst stop : 1, 2 for CAS latency= 2, 3 respectiviely.
4. PRE : Both banks precharge if necessary.
MRS can be issued only at all bank precharge state.
8. Burst Stop & Precharge Interrupt
D
0
D
1
D
2
CLK
CMD
DQ
WR
PRE
D
3
1) Write Interrupted by Precharge (BL=4)
t
RDL Note 1
3) Read Interrupted by Precharge (BL=4)
CLK
CMD
DQ(CL2)
DQ(CL3)
RD
PRE
Q
0
Q
1
Q
0
Q
1
1
2
Note 3
9. MRS & SMRS
CLK
SMRS
2) Special Mode Register Set
D
0
D
1
D
2
CLK
CMD
DQ
WR
STOP
2) Write Burst Stop (Full Page Only)
4) Read Burst Stop (Full Page Only)
CLK
CMD
DQ(CL2)
DQ(CL3)
RD
STOP
Q
0
Q
1
Q
0
Q
1
1
2
Note 3
BW
1CLK
CMD
DQM
t
BDL
*Note :
CLK
PRE
1) Mode Register Set
MRS ACT
Note 4
t
RP
1CLK
CMD
ACT SMRSSMRS
1CLK
1CLK
1CLK
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KM4132G271BQR-7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
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