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參數(shù)資料
| 型號(hào)： | KM416C1000C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 100萬× 16的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的快速頁面模式 |
| 文件頁數(shù)： | 4/34頁 |
| 文件大?。?/td> | 767K |
| 代理商： | KM416C1000C |
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KM416C1000C, KM416C1200C
KM416V1000C, KM416V1200C
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one fast page mode cycle time, t
PC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and UCAS, LCAS cycling @t
RC
=min.)
I
CC2
: Standby Current (RAS=UCAS=LCAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (UCAS=LCAS=V
IH
, RAS cycling @t
RC
=min.)
I
CC4
* : Fast Page Mode Current (RAS=V
IL
, UCAS or LCAS, Address cycling @t
PC
=min.)
I
CC5
: Standby Current (RAS=UCAS=LCAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @t
RC
=min.)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, UCAS, LCAS=0.2V,
DQ=Don
′
t care, T
RC
=31.25us(4K/L-ver), 125us(1K/L-ver),
T
RAS
=T
RAS
min~300ns
I
CCS
: Self Refresh Current
RAS=UCAS=LCAS=V
IL
, W=OE=A0 ~ A11=V
CC
-0.2V or 0.2V,
DQ0 ~ DQ15=V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM416V1000C
KM416V1200C
KM416C1000C
KM416C1200C
I
CC1
Don
′
t care
-5
-6
90
80
140
130
90
80
140
130
mA
mA
I
CC2
Normal
L
Don
′
t care
1
1
1
1
2
1
2
1
mA
mA
I
CC3
Don
′
t care
-5
-6
90
80
140
130
90
80
140
130
mA
mA
I
CC4
Don
′
t care
-5
-6
90
80
90
80
90
80
90
80
mA
mA
I
CC5
Normal
L
Don
′
t care
0.5
200
0.5
200
1
200
1
200
mA
uA
I
CC6
Don
′
t care
-5
-6
90
80
140
130
90
80
140
130
mA
mA
I
CC7
L
Don
′
t care
300
200
350
250
uA
I
CCS
L
Don
′
t care
150
150
200
200
uA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416V1000C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1200C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C1204C-6 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416V12CT-L6 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C1004C-45 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416C1004C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C1004C-45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C1004C-5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C1004C-6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C1004C-L45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
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