- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373153 > KM416C1200C (SAMSUNG SEMICONDUCTOR CO. LTD.) 12.4K OHM 1% 1/2W M/F LEADED RESISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | KM416C1200C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 12.4K OHM 1% 1/2W M/F LEADED RESISTOR |
| 中文描述： | 100萬× 16的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的快速頁面模式 |
| 文件頁數(shù)： | 8/34頁 |
| 文件大小： | 767K |
| 代理商： | KM416C1200C |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁當(dāng)前第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁
KM416C1000C, KM416C1200C
KM416V1000C, KM416V1200C
CMOS DRAM
t
CWD
is referenced to the later CAS falling edge at word read-modify-write cycle.
t
CWL
is specified from W falling edge to the earlier CAS rising edge
.
t
CSR
is referenced to the earlier CAS falling edge before RAS transition low.
t
CHR
is referenced to the later CAS rising edge after RAS transition low.
t
CSR
t
CHR
RAS
LCAS
UCAS
16.
15.
14.
13.
t
DS,
t
DH
is independently specified for lower byte DQ(0-7), upper byte DQ(8-15)
If
t
RASS
≥
100us, then RAS precharge time must use
t
RPS
instead of
t
RP
.
For RAS-only refresh and burst CAS-before-RAS refresh mode, 4096(4K)/1024(1K) cycles of burst refresh must be executed
within 64ms/16ms before and after self refresh, in order to meet refresh specification.
For distributed CAS-before-RAS with 15.6us interval CAS-before-RAS refresh should be executed with in 15.6us immediately
before and after self refresh in order to meet refresh specification.
17.
18.
19.
20.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416C1000C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1000C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1200C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C1204C-6 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416V12CT-L6 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416C1200CT-L6 | 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 1M x 16, 44 Pin, Plastic, TSOP |
| KM416C1204BJ6 | 制造商:SAM 功能描述:NEW |
| KM416C1204BT-6 | 制造商:Samsung Electro-Mechanics 功能描述:1M X 16 EDO DRAM, 60 ns, PDSO44 |
| KM416C1204C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C1204C-45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。