參數(shù)資料
型號： KM416V1000B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
中文描述： 100萬× 16的CMOS動態(tài)隨機存儲器的快速頁面模式
文件頁數(shù)： 4/8頁
文件大?。?/td> 84K
代理商： KM416V1000B
KM416C1000B, KM416C1200B
KM416V1000B, KM416V1200B
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one fast page mode cycle time,
t
PC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and UCAS, LCAS cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=UCAS=LCAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (UCAS=LCAS=V
IH
, RAS cycling @
t
RC
=min.)
I
CC4
* : Fast Page Mode Current (RAS=V
IL
, UCAS or LCAS, Address cycling @
t
PC
=min.)
I
CC5
: Standby Current (RAS=UCAS=LCAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @
t
RC
=min.)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, UCAS, LCAS=0.2V,
Din=Don't care, T
RC
=31.25us(4K/L-ver), 125us(1K/L-ver),
T
RAS
=T
RAS
min~300ns
I
CCS
: Self Refresh Current
RAS=UCAS=LCAS=V
IL
, W=OE=A0 ~ A11=V
CC
-0.2V or 0.2V,
DQ0 ~ DQ15=V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM416V1000B
KM416V1200B
KM416C1000B
KM416C1200B
I
CC1
Don't care
-5
-6
-7
110
100
90
160
150
140
110
100
90
160
150
140
mA
mA
mA
I
CC2
Normal
L
Don't care
2
1
2
1
2
1
2
1
mA
mA
I
CC3
Don't care
-5
-6
-7
110
100
90
160
150
140
110
100
90
160
150
140
mA
mA
mA
I
CC4
Don't care
-5
-6
-7
100
90
80
100
90
80
100
90
80
100
90
80
mA
mA
mA
I
CC5
Normal
L
Don't care
1
200
1
200
1
200
1
200
mA
uA
I
CC6
Don't care
-5
-6
-7
110
100
90
160
150
140
110
100
90
160
150
140
mA
mA
mA
I
CC7
L
Don't care
400
300
450
350
uA
I
CCS
L
Don't care
200
200
250
250
uA
相關(guān)PDF資料
PDF描述
KM416V1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1200C 12.4K OHM 1% 1/2W M/F LEADED RESISTOR
KM416C1000C 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V1000C 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V1200C 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416V1000BT-L6 制造商:Samsung Semiconductor 功能描述:
KM416V1000C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V1004A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT
KM416V1004A-6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT
KM416V1004A-7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT
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