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參數(shù)資料
| 型號： | KM416V1000C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 100萬× 16的CMOS動態(tài)隨機存儲器的快速頁面模式 |
| 文件頁數(shù)： | 5/34頁 |
| 文件大小： | 767K |
| 代理商： | KM416V1000C |
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KM416C1000C, KM416C1200C
KM416V1000C, KM416V1200C
CMOS DRAM
CAPACITANCE
(T
A
=25
°
C, V
CC
=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A11]
C
IN1
-
5
pF
Input capacitance [RAS, UCAS, LCAS, W, OE]
C
IN2
-
7
pF
Output capacitance [DQ0 - DQ15]
C
DQ
-
7
pF
Test condition (5V device) : V
CC
=5.0V
±
10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Test condition (3.3V device) : V
CC
=3.3V
±
0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-5
-6
Units
Notes
Min
Max
Min
Max
Random read or write cycle time
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
OFF
t
T
90
110
ns
Read-modify-write cycle time
133
155
ns
Access time from RAS
50
60
ns
3,4,10
Access time from CAS
15
15
ns
3,4,5
Access time from column address
25
30
ns
3,10
CAS to output in Low-Z
0
0
ns
3
Output buffer turn-off delay
0
13
0
15
ns
6
Transition time (rise and fall)
3
50
3
50
ns
2
RAS precharge time
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
30
40
ns
RAS pulse width
50
10K
60
10K
ns
RAS hold time
13
15
ns
CAS hold time
50
60
ns
CAS pulse width
13
10K
15
10K
ns
RAS to CAS delay time
20
37
20
45
ns
4
RAS to column address delay time
15
25
15
30
ns
10
CAS to RAS precharge time
5
5
ns
Row address set-up time
0
0
ns
Row address hold time
10
10
ns
Column address set-up time
0
0
ns
11
Column address hold time
10
10
ns
11
Column address to RAS lead time
25
30
ns
Read command set-up time
t
RCS
t
RCH
t
RRH
t
WCH
t
WP
t
RWL
t
CWL
0
0
ns
Read command hold time referenced to CAS
0
0
ns
8
Read command hold time referenced to RAS
0
0
ns
8
Write command hold time
10
10
ns
Write command pulse width
10
10
ns
Write command to RAS lead time
13
15
ns
Write command to CAS lead time
13
15
ns
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, See note 1,2)
相關PDF資料 |
PDF描述 |
|---|---|
| KM416V1200C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C1204C-6 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416V12CT-L6 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C1004C-45 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C1004C-5 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KM416V1004A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| KM416V1004A-6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| KM416V1004A-7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| KM416V1004A-8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| KM416V1004A-F6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
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