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參數(shù)資料
| 型號： | KM416V1200B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 100萬× 16的CMOS動態(tài)隨機(jī)存儲器的快速頁面模式 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 84K |
| 代理商： | KM416V1200B |
KM416C1000B, KM416C1200B
KM416V1000B, KM416V1200B
CMOS DRAM
CAPACITANCE
(T
A
=25
é
, V
CC
=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A11]
C
IN1
-
5
pF
Input capacitance [RAS, UCAS, LCAS, W, OE]
C
IN2
-
7
pF
Output capacitance [DQ0 - DQ15]
C
DQ
-
7
pF
Test condition (5V device) : V
CC
=5.0V
10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Test condition (3.3V device) : V
CC
=3.3V
0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-5
-6
-7
Units
Notes
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
t
RWC
90
110
130
ns
Read-modify-write cycle time
133
155
185
ns
Access time from RAS
t
RAC
t
CAC
50
60
70
ns
3,4,9
Access time from CAS
15
15
20
ns
3,4
Access time from column address
t
AA
t
CLZ
25
30
35
ns
3,9
CAS to output in Low-Z
0
0
0
ns
3
Output buffer turn-off delay
t
OFF
t
T
0
13
0
15
0
20
ns
5
Transition time (rise and fall)
3
50
3
50
3
50
ns
2
RAS precharge time
t
RP
t
RAS
30
40
50
ns
RAS pulse width
50
10K
60
10K
70
10K
ns
RAS hold time
t
RSH
t
CSH
13
15
20
ns
CAS hold time
50
60
70
ns
CAS pulse width
t
CAS
t
RCD
13
10K
15
10K
20
10K
ns
RAS to CAS delay time
20
37
20
45
20
50
ns
4
RAS to column address delay time
t
RAD
t
CRP
15
25
15
30
15
35
ns
9
CAS to RAS precharge time
5
5
5
ns
Row address set-up time
t
ASR
t
RAH
0
0
0
ns
Row address hold time
10
10
10
ns
Column address set-up time
t
ASC
t
CAH
0
0
0
ns
10
Column address hold time
10
10
15
ns
10
Column address to RAS lead time
t
RAL
t
RCS
25
30
35
ns
Read command set-up time
0
0
0
ns
Read command hold time referenced to CAS
t
RCH
t
RRH
0
0
0
ns
7
Read command hold time referenced to RAS
0
0
0
ns
7
Write command hold time
t
WCH
t
WP
10
10
15
ns
Write command pulse width
10
10
15
ns
Write command to RAS lead time
t
RWL
t
CWL
15
15
20
ns
Write command to CAS lead time
13
15
20
ns
AC CHARACTERISTICS
(0
é
T
A
70
é
, See note 1,2)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416C1200C | 12.4K OHM 1% 1/2W M/F LEADED RESISTOR |
| KM416C1000C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1000C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1200C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C1204C-6 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416V1200C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1200CT6 | 制造商:Samsung Semiconductor 功能描述: |
| KM416V1204BJ | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT |
| KM416V1204C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416V1204C-45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
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