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參數(shù)資料
| 型號： | KM416V12CJ-L5 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 100萬× 16的CMOS動態(tài)隨機存儲器的擴展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 5/35頁 |
| 文件大?。?/td> | 494K |
| 代理商： | KM416V12CJ-L5 |
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KM416C1004C, KM416C1204C
KM416V1004C, KM416V1204C
CMOS DRAM
CAPACITANCE
(T
A
=25
°
C, V
CC
=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A11]
C
IN1
-
5
pF
Input capacitance [RAS, UCAS, LCAS, W, OE]
C
IN2
-
7
pF
Output capacitance [DQ0 - DQ15]
C
DQ
-
7
pF
Test condition (5V device) : V
CC
=5.0V
±
10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V
Test condition (3.3V device) : V
CC
=3.3V
±
0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-45
-5
-6
Units
Notes
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
79
84
104
ns
Read-modify-write cycle time
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
CEZ
t
OLZ
t
T
t
RP
t
RAS
t
RSH
t
CSH
105
115
140
ns
Access time from RAS
45
50
60
ns
3,4,10
Access time from CAS
14
15
17
ns
3,4,5
Access time from column address
23
25
30
ns
3,10
CAS to output in Low-Z
3
3
3
ns
3
Output buffer turn-off delay from CAS
3
13
3
13
3
15
ns
6,19
OE to output in Low-Z
3
3
3
ns
3
Transition time (rise and fall)
2
50
2
50
2
50
ns
2
RAS precharge time
30
30
40
ns
RAS pulse width
45
10K
50
10K
60
10K
ns
RAS hold time
13
13
17
ns
CAS hold time
36
40
50
ns
CAS pulse width
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
7
10K
8
10K
10
10K
ns
18
RAS to CAS delay time
19
31
20
35
20
43
ns
4
RAS to column address delay time
14
22
15
25
15
30
ns
10
CAS to RAS precharge time
5
5
5
ns
Row address set-up time
0
0
0
ns
Row address hold time
9
10
10
ns
Column address set-up time
0
0
0
ns
11
Column address hold time
7
8
10
ns
11
Column address to RAS lead time
23
25
30
ns
Read command set-up time
0
0
0
ns
Read command hold time referenced to CAS
0
0
0
ns
8
Read command hold time referenced to RAS
0
0
0
ns
8
Write command hold time
8
10
10
ns
Write command pulse width
t
WP
t
RWL
t
CWL
8
10
10
ns
Write command to RAS lead time
10
13
15
ns
Write command to CAS lead time
7
8
10
ns
14
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, See note 1,2)
相關PDF資料 |
PDF描述 |
|---|---|
| KM416V12CJ-L6 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416V12CT-L45 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416V12CT-L5 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C1204C | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C1004C | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KM416V12CJ-L6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416V12CT-L45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416V12CT-L5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416V12CT-L6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416V254D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16Bit CMOS Dynamic RAM with Extended Data Out |
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