參數(shù)資料
型號: KM416V254DL
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256K x 16Bit CMOS Dynamic RAM with Extended Data Out(256K x 16位 CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出))
中文描述: 256 × 16位分辨率的CMOS擴展數(shù)據(jù)輸出動態(tài)存儲器(256K × 16位的CMOS動態(tài)隨機存儲器(帶擴展數(shù)據(jù)輸出))
文件頁數(shù): 34/36頁
文件大小: 777K
代理商: KM416V254DL
KM416C254D/DL, KM416V254D/DL
CMOS DRAM
CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE
RAS
V
IH
-
V
IL
-
UCAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
COLUMN
ADDRESS
t
RAS
t
RSH
t
CHR
t
RAL
t
CSR
t
CPT
t
RP
t
CAS
t
ASC
t
CAH
READ CYCLE
V
OH
-
V
OL
-
DQ0 ~ DQ15
t
REZ
t
CLZ
WRITE CYCLE
V
IH
-
V
IL
-
DATA-IN
DQ0 ~ DQ15
t
DH
t
DS
W
V
IH
-
V
IL
-
t
WP
t
CWD
t
CWL
t
RWL
READ-MODIFY-WRITE
t
AWD
V
IH
-
V
IL
-
OE
t
OEA
t
AA
t
CAC
t
DS
t
DH
VALID
DATA-IN
V
I/OH
-
V
I/OL
-
DQ0 ~ DQ15
Don
t care
Undefined
V
IH
-
V
IL
-
OE
t
OEA
t
OEZ
OE
V
IH
-
V
IL
-
t
RCS
t
CLZ
t
OEZ
t
OED
t
WRP
t
WRH
t
RCH
t
RCS
t
CAC
t
AA
V
IH
-
V
IL
-
W
t
WRP
t
WRH
t
WCS
t
WCH
t
CWL
V
IH
-
V
IL
-
W
t
WP
t
RWL
t
WRP
t
WRH
VALID
DATA-IN
NOTE : This timing diagram is applied to all devices besides 16M DRAM 4th & 64M DRAM.
LCAS
V
IH
-
V
IL
-
t
RSH
t
CHR
t
CSR
t
CPT
t
CAS
t
RRH
DATA-OUT
t
CEZ
t
WEZ
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