參數(shù)資料
型號(hào)： KM432V515
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512K x 32Bit CMOS Quad CAS DRAM with EDO(512K x 32位CMOS四 CAS 動(dòng)態(tài)RAM(帶EDO模式))
中文描述： 為512k × 32Bit的中科院的CMOS四路DRAM與江戶（512k × 32的位的CMOS四中科院動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶EDO公司模式））
文件頁(yè)數(shù)： 1/21頁(yè)
文件大?。?/td> 400K
代理商： KM432V515
CMOS DRAM
KM432V515
Preliminary
This is a 524,288 x 32 bit Extended Data Out CMOS DRAM. Extended Data Out Mode offers high speed random access of memory cells
within the same row, so called Hyper Page Mode. Power supply voltage +3.3V, refresh cycle 1K, access time -6, power consump-
tion(Normal or Low power) and SOJ package type are features of this device. This device has CAS-before-RAS refresh, RAS-only
refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 512Kx32 EDO Mode Quad
CAS DRAM is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reli-
ability.
Part Identification
- KM432V515J (3.3V, 1K Ref.)
- KM432V515J-L (3.3V, 1K Ref. LP)
Extended Data Out Mode operation
(Fast Page Mode with Extended Data Out)
Four separate CAS pins provide for separate I/O operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (L-ver only)
LVTTL(3.3V) compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Plastic SOJ 400mil x 1125mil package
Single +3.3V
±
0.3V power supply
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Column Decoder
RAS
CAS0-3
W
Vcc
Vss
DQ0
to
DQ7
A0 - A9
A0 - A8
Memory Array
524,288 x 32
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
512K x 32Bit CMOS Quad CAS DRAM with EDO
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Performance Range
Speed
-6
t
RAC
60ns
t
CAC
17ns
t
RC
104ns
t
HPC
27ns
Remark
3.3V
CAS0
D/I Buffer
OE
Refresh Cycles
Part
NO.
V
CC
Refresh
cycle
Refresh period
Normal
16ms
L-ver
128ms
432V515J-L
3.3V
1K
Active Power Dissipation
Speed
Refresh Cycle
1K
540
-6
Unit : mW
CAS0
D/O Buffer
CAS1
D/I Buffer
CAS1
D/O Buffer
CAS2
D/I Buffer
CAS2
D/O Buffer
CAS3
D/I Buffer
CAS3
D/O Buffer
DQ8
to
DQ15
DQ16
to
DQ23
DQ24
to
DQ31
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