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參數(shù)資料
| 型號(hào)： | KM44C16000B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 16米x 4位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的快速頁面模式 |
| 文件頁數(shù)： | 5/20頁 |
| 文件大?。?/td> | 223K |
| 代理商： | KM44C16000B |
KM44C16000B,
KM44C16100B
CMOS DRAM
CAPACITANCE
(T
A
=25
°
C, V
CC
=5.0V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A12]
C
IN1
-
5
pF
Input capacitance [RAS, CAS, W, OE]
C
IN2
-
7
pF
Output capacitance [DQ0 - DQ3]
C
DQ
-
7
pF
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, See note 1,2)
Test condition : V
CC
=5.0V
±
10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Parameter
Symbol
-45
-5
-6
Units
Note
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
OFF
t
T
t
RP
t
RAS
t
RSH
t
CSH
80
90
110
ns
Read-modify-write cycle time
115
133
153
ns
Access time from RAS
45
50
60
ns
3,4,10
Access time from CAS
12
13
15
ns
3,4,5
Access time from column address
23
25
30
ns
3,10
CAS to output in Low-Z
0
0
0
ns
3
Output buffer turn-off delay
0
13
0
13
0
13
ns
6
Transition time (rise and fall)
1
50
1
50
1
50
ns
2
RAS precharge time
25
30
40
ns
RAS pulse width
45
10K
50
10K
60
10K
ns
RAS hold time
12
13
15
ns
CAS hold time
45
50
60
ns
CAS pulse width
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
12
10K
13
10K
15
10K
ns
RAS to CAS delay time
18
33
20
37
20
45
ns
4
RAS to column address delay time
13
22
15
25
15
30
ns
10
CAS to RAS precharge time
5
5
5
ns
Row address set-up time
0
0
0
ns
Row address hold time
8
10
10
ns
Column address set-up time
0
0
0
ns
Column address hold time
8
10
10
ns
Column address to RAS lead time
23
25
30
ns
Read command set-up time
0
0
0
ns
Read command hold time referenced to CAS
0
0
0
ns
8
Read command hold time referenced to RAS
0
0
0
ns
8
Write command hold time
8
10
10
ns
Write command pulse width
t
WP
t
RWL
t
CWL
t
DS
t
DH
8
10
10
ns
Write command to RAS lead time
13
15
15
ns
Write command to CAS lead time
12
13
15
ns
Data set-up time
0
0
0
ns
9
Data hold time
10
10
10
ns
9
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|---|---|
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| KM44C256A-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C256A-12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
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