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參數(shù)資料
| 型號： | KM44C4100C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode(4M x 4位 CMOS 動態(tài)RAM(帶快速頁模式)) |
| 中文描述： | 4米× 4位的快速頁面模式的CMOS動態(tài)RAM（4米× 4位的CMOS動態(tài)隨機(jī)存儲器（帶快速頁模式）） |
| 文件頁數(shù)： | 6/20頁 |
| 文件大?。?/td> | 320K |
| 代理商： | KM44C4100C |
KM44C4000C, KM44C4100C
KM44V4000C, KM44V4100C
CMOS DRAM
AC CHARACTERISTICS
(Continued)
Parameter
Symbol
-5
-6
Units
Note
Min
Max
Min
Max
Data set-up time
t
DS
t
DH
t
REF
t
REF
t
REF
t
WCS
t
CWD
t
RWD
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPA
t
PC
t
PRWC
t
CP
t
RASP
t
RHCP
t
OEA
t
OED
t
OEZ
t
OEH
t
WTS
t
WTH
t
WRP
t
WRH
t
RASS
t
RPS
t
CHS
0
0
ns
9
Data hold time
10
10
ns
9
Refresh period (2K, Normal)
32
32
ms
Refresh period (4K, Normal)
64
64
ms
Refresh period (L-ver)
128
128
ms
Write command set-up time
0
0
ns
7
CAS to W delay time
36
40
ns
7
RAS to W delay time
73
85
ns
7
Column address to W delay time
48
55
ns
7
CAS precharge to W delay time
53
60
ns
CAS set-up time (CAS -before-RAS refresh)
5
5
ns
CAS hold time (CAS -before-RAS refresh)
10
10
ns
RAS to CAS precharge time
5
5
ns
Access time from CAS precharge
30
35
ns
3
Fast Page cycle time
35
40
ns
Fast Page read-modify-write cycle time
76
85
ns
CAS precharge time (Fast Page cycle)
10
10
ns
RAS pulse width (Fast Page cycle)
50
200K
60
200K
ns
RAS hold time from CAS precharge
30
35
ns
OE access time
13
15
ns
OE to data delay
13
15
ns
Output buffer turn off delay time from OE
0
13
0
15
ns
6
OE command hold time
13
15
ns
Write command set-up time (Test mode in)
10
10
ns
11
Write command hold time (Test mode in)
10
10
ns
11
W to RAS precharge time(C-B-R refresh)
10
10
ns
W to RAS hold time(C-B-R refresh)
10
10
ns
RAS pulse width (C-B-R self refresh)
100
100
us
13,14,15
RAS precharge time (C-B-R self refresh)
90
110
ns
13,14,15
CAS hold time (C-B-R self refresh)
-50
-50
ns
13,14,15
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM44V4000C | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode(4M x 4位 CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM44V4100C | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode(4M x 4位 CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM44S16020B | 8M x 4Bit x 2 Banks Synchronous DRAM(8M x 4位 x 2組同步動態(tài)RAM) |
| KM44S4020CT | 2M x 4Bit x 2 Banks Synchronous DRAM(2M x 4位 x 2組同步動態(tài)RAM) |
| KM44S64230A | 16M x 4Bit x 4 Banks Synchronous DRAM(16M x 4位 x 4組同步動態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44C4103C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode |
| KM44C4103CK-6 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip FPM 16M-Bit 4Mx4 5V 28-Pin SOJ |
| KM44C4104AK-60 | 制造商:Samsung Semiconductor 功能描述: |
| KM44C4105C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out |
| KM44L16031BT-GFZ/Y/0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Specification Version 0.61 |
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