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參數(shù)資料
| 型號(hào)： | KM611001L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 1Bit High-Speed CMOS SRAM |
| 中文描述： | 100萬(wàn)x 1位高速CMOS SRAM的 |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 95K |
| 代理商： | KM611001L |
KM611001/L
CMOS SRAM
Rev 2.0
July-1996
6
TIMING WAVE FORM OF WRITE CYCLE(1)
(/WE=Controlled)
Address
/CS
/WE
Data In
High-Z
tCW(3)
tDH
tRC
tAW
Data Valid
t WP(2)
t WR(5)
tOW
High-Z
tAS(4)
tDW
Data Out
tWHZ
TIMING WAVE FORM OF WRITE CYCLE(2)
(/CS=Controlled)
Address
/CS
/WE
Data In
High-Z
tCW(3)
tDH
tRC
tAW
Data Valid
t WP(2)
t WR(5)
High-Z
tDW
Data Out
tWHZ
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