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參數(shù)資料
| 型號(hào)： | KM6164002ATE-17 |
| 元件分類： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 17 ns, PDSO44 |
| 封裝： | 0.400 INCH, TSOP2-44 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 197K |
| 代理商： | KM6164002ATE-17 |
KM6164002A, KM6164002AE, KM6164002AI
CMOS SRAM
PRELIMINARY
Rev 2.1
- 1 -
December 1998
Document Title
256Kx16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out.
Operated at Commercial, Extended and Industrial Temperature Ranges.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev No.
Rev. 0.0
Rev. 0.5
Rev. 1.0
Rev.2.0
Rev.2.1
Remark
Design Target
Preliminary
Final
Final
Final
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
0.1. Replace Design Target to Preliminary.
0.2. Delete 12ns part but add 17ns part.
0.3. Relax D.C and A.C parameters and insert new parameter(Icc
1
)
with the test condition.
0.3.1. Insert Icc
1
parameter with the test condition as address is
increased with binary count.
0.3.2. Relax D.C and A.C parameters.
Previous spec.
(15/ - /20ns part)
Icc
250/ - /240mA
t
CW
10/ - /12ns
t
AW
10/ - /12ns
t
WP
(OE=H)
10/ - /12ns
t
WP1
(OE=L)
12/ - /14ns
t
DW
7/ - /9ns
Release to Final Data Sheet.
1.1. Delete Preliminary.
1.2. Delete Icc1 parameter with the test condition.
1.3. Update D.C parameters.
1.4. Add the test condition for V
OH1
with Vcc=5V
±
5% at 25
°
C.
1.5. Add timing diagram to define t
WP1
as
″(
Timing Wave Form of
Write Cycle(OE=Low fixed)
″
.
2.1 Add extended and industrial temperature range parts.
Add 44-TSOP2 Package.
Items
Relaxed spec.
(15/17/20ns part)
280/275/270mA
12/13/14ns
12/13/14ns
12/13/14ns
15/17/20ns
8/ 9/10ns
Items
Previous spec.
(15/17/20ns part)
280/275/270mA
Updated spec.
(15/17/20ns part)
210/205/200mA
Icc
Draft Data
Jun. 14th, 1996
Sep. 16th, 1996
Jun. 5th, 1997
Feb. 25th, 1998
Dec. 14th, 1998
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